Poster PHYSICS-BASED COMPACT MODEL FOR SCHOTTKY BARRIER CARBON NANOTUBE FET

For not highly doped or undoped source/drain regions, CNTFET Schottky barriers (SB) are formed between the metal contacts and the semiconducting carbon nanotube at source/drain (S/D). Under these conditions, the source and drain current is affected by tunnelling mechanisms through these barriers. By changing the gate voltage (figure 1), energy bands ar

Analysis of CNTFET physical compact model

Abstract — On the basis of acquired knowledge, we present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of CNT helicity and radius on the dc characteristics. The purpose is to enable the circuit designers to challenge CNTFET potentialities for performing logical or analogical functionalities within complex circuits

FPGA Design with Double-Gate Carbon Nanotube Transistors

International audienc

Multiscale simulation of carbon nanotube devices

International audienceIn recent years, the understanding and accurate simulation of carbon nanotube-based devices has become very challenging. Conventional simulation tools of microelectronics are necessary to envisage the performance and use of nanotube transistors and circuits, but the models need to be refined to properly describe the full complexity of such novel type of devices at the nanoscale. Indeed, many issues such as contact resistance, low dimensional electrostatics and screening effects, as well as nanotube doping or functionalization, demand for more accurate quantum approaches. In this article, we review our recent progress on multiscale simulations which aim at bridging first principles calculations with compact modelling, including the comparison between semiclassical Monte Carlo and quantum transport approaches