Poster PHYSICS-BASED COMPACT MODEL FOR SCHOTTKY BARRIER CARBON NANOTUBE FET

Abstract

For not highly doped or undoped source/drain regions, CNTFET Schottky barriers (SB) are formed between the metal contacts and the semiconducting carbon nanotube at source/drain (S/D). Under these conditions, the source and drain current is affected by tunnelling mechanisms through these barriers. By changing the gate voltage (figure 1), energy bands ar