Frequency Modulation of Spin-Transfer Oscillators

Spin-polarized dc electric current flowing into a magnetic layer can induce precession of the magnetization at a frequency that depends on current. We show that addition of an ac current to this dc bias current results in a frequency modulated (FM) spectral output, generating sidebands spaced at the modulation frequency. The sideband amplitudes and shift of the center frequency with drive amplitude are in good agreement with a nonlinear FM model that takes into account the nonlinear frequency-current relation generally induced by spin transfer. Single-domain simulations show that ac current modulates the cone angle of the magnetization precession, in turn modulating the frequency via the demagnetizing field. These results are promising for communications and signal processing applications of spin-transfer oscillators.Comment: 13 pages, 3 Figure

Temperature dependent dynamic and static magnetic response in magnetic tunnel junctions with Permalloy layers

Ferromagnetic resonance and static magnetic properties of CoFe/Al2O3/CoFe/Py and CoFe/Al2O3/CoFeB/Py magnetic tunnel junctions and of 25nm thick single-layer Permalloy(Py) films have been studied as a function of temperature down to 2K. The temperature dependence of the ferromagnetic resonance excited in the Py layers in magnetic tunnel junctions shows knee-like enhancement of the resonance frequency accompanied by an anomaly in the magnetization near 60K. We attribute the anomalous static and dynamic magnetic response at low temperatures to interface stress induced magnetic reorientation transition at the Py interface which could be influenced by dipolar soft-hard layer coupling through the Al2O3 barrier

Broadband Ferromagnetic Resonance Linewidth Measurement of Magnetic Tunnel Junction Multilayers

The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low frequency noise in patterned devices, and previous observations of magnetic domain ripple by use of Lorentz microscopy. Postannealing changes the free layer FMR linewidth indicating that considerable magnetic disorder, originating in the exchange-biased pinned layer, is transferred to the free layer.Comment: 13 pages, 4 figure

Switching Distributions for Perpendicular Spin-Torque Devices within the Macrospin Approximation

We model "soft" error rates for writing (WSER) and for reading (RSER) for perpendicular spin-torque memory devices by solving the Fokker-Planck equation for the probability distribution of the angle that the free layer magnetization makes with the normal to the plane of the film. We obtain: (1) an exact, closed form, analytical expression for the zero-temperature switching time as a function of initial angle; (2) an approximate analytical expression for the exponential decay of the WSER as a function of the time the current is applied; (3) comparison of the approximate analytical expression for the WSER to numerical solutions of the Fokker-Planck equation; (4) an approximate analytical expression for the linear increase in RSER with current applied for reading; (5) comparison of the approximate analytical formula for the RSER to the numerical solution of the Fokker-Planck equation; and (6) confirmation of the accuracy of the Fokker-Planck solutions by comparison with results of direct simulation using the single-macrospin Landau-Lifshitz-Gilbert (LLG) equations with a random fluctuating field in the short-time regime for which the latter is practical

Direct-Current Induced Dynamics in Co90Fe10/Ni80Fe20 Point Contacts

We have directly measured coherent high-frequency magnetization dynamics in ferromagnet films induced by a spin-polarized DC current. The precession frequency can be tuned over a range of several gigahertz, by varying the applied current. The frequencies of excitation also vary with applied field, resulting in a microwave oscillator that can be tuned from below 5 GHz to above 40 GHz. This novel method of inducing high-frequency dynamics yields oscillations having quality factors from 200 to 800. We compare our results with those from single-domain simulations of current-induced dynamics

Flux flow of Abrikosov-Josephson vortices along grain boundaries in high-temperature superconductors

We show that low-angle grain boundaries (GB) in high-temperature superconductors exhibit intermediate Abrikosov vortices with Josephson cores, whose length $l$ along GB is smaller that the London penetration depth, but larger than the coherence length. We found an exact solution for a periodic vortex structure moving along GB in a magnetic field $H$ and calculated the flux flow resistivity $R_F(H)$, and the nonlinear voltage-current characteristics. The predicted $R_F(H)$ dependence describes well our experimental data on $7^{\circ}$ unirradiated and irradiated $YBa_2Cu_3O_7$ bicrystals, from which the core size $l(T)$, and the intrinsic depairing density $J_b(T)$ on nanoscales of few GB dislocations were measured for the first time. The observed temperature dependence of $J_b(T)=J_{b0}(1-T/T_c)^2$ indicates a significant order parameter suppression in current channels between GB dislocation cores.Comment: 5 pages 5 figures. Phys. Rev. Lett. (accepted

Adjusting magnetic nanostructures for high-performance magnetic sensors

The magnetic properties of the soft ferromagnetic layer in magnetic tunnel junctions are one of key factors to determine the performance of magnetoresistance sensors. We use a three-step orthogonal annealing procedure to modify the nanostructures of the free layer in the magnetic tunnel junction to control features such as magnetization reversal, coercivity, exchange field, and tunnel magnetoresistance ratio. We present a sensor with an improved sensitivity as high as 3944%/mT. This magnetic sensor only dissipates 200 lW of power while operating under an applied voltage of 1V

Electron correlation in two-photon double ionization of helium from attosecond to FEL pulses

We investigate the role of electron correlation in the two-photon double ionization of helium for ultrashort XUV pulses with durations ranging from a hundred attoseconds to a few femtoseconds. We perform time-dependent ab initio calculations for pulses with mean frequencies in the so-called "sequential" regime (photon energy above 54.4 eV). Electron correlation induced by the time correlation between emission events manifests itself in the angular distribution of the ejected electrons, which strongly depends on the energy sharing between them. We show that for ultrashort pulses two-photon double ionization probabilities scale non-uniformly with pulse duration depending on the energy sharing between the electrons. Most interestingly we find evidence for an interference between direct ("nonsequential") and indirect ("sequential") double photo-ionization with intermediate shake-up states, the strength of which is controlled by the pulse duration. This observation may provide a route toward measuring the pulse duration of FEL pulses.Comment: 9 pages, 6 figure