Photothermal effect in narrow band gap PbTe semiconductor

In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO(2) laser with photon energy less than PbTe forbidden gap

Стандартизация государственного финансового контроля

We investigate two types of GaAs microwave detector: point contact diode with n-n+ junction and planar one, which involves asymmetrically necked thin semiconductor film containing n-n+ junction in its narrowest part. The voltage sensitivity of the GaAs point contact diode, in contrast to those made from Ge or Si, increases with the strength of the microwave electric field due to the increase of both the electron energy relaxation time and the diffusion coefficient at room temperature. Investigating the voltage-power characteristic of the planar diode we have determined experimentally that the voltage sensitivity of the planar detector weakly depends on frequency within the 26 - 140 GHz range

Photoresponse of Schottky-barrier detector under strong IR laser excitation

Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation gives rise to the photovoltage even if an incident photon energy is lower than Schottky barrier height. In this case the photovoltage as a function of light intensity follows a power-law dependence with the power greater than unity (2...6). The results are interpreted from the viewpoint of electron emission over the potential barrier due to multiphoton or multistep light absorption at the metal-semiconductor interface

Electric Field Distributions in the Open Cylindrical Silicon Carbide Waveguides

Here are presented the results of an electrodynamical analysis of the SiC waveguides with two different radii R=1.5 mm and R=2.5 mm. We have investigated the dispersion characteristics of these waveguides as well as the electric field distributions in the waveguide cross-sections at f=50 and 25 GHz

Electric Field Distributions in the Open Cylindrical Silicon Carbide Waveguides

Here are presented the results of an electrodynamical analysis of the SiC waveguides with two different radii R=1.5 mm and R=2.5 mm. We have investigated the dispersion characteristics of these waveguides as well as the electric field distributions in the waveguide cross-sections at f=50 and 25 GHz

Ultrafast phenomena in semiconductors 2001

11th International Symposium 27-29.8.2001, Vilnius, Lithuania

New GaAs infrared detector

We report our results of experimental study of photovoltage induced by pulsed CO2 laser in GaAs p-n and 1-h junctions. We demonstrate that photoemission of hot carriers across the potential barrier and the crystal lattice heating are the dominant mechanisms in the photovoltage formation. The obtained results show that hot-carrier effects in inhomogeneous GaAs can be used to detect very short infrared laser pulses