Low-complexity iterative method of equalization for single carrier with cyclic prefix in doubly selective channels

Orthogonal frequency division multiplexing (OFDM)requires an expensive linear amplifier at the transmitter due to its high peak-to-average power ratio (PAPR). Single carrier with cyclic prefix (SC-CP) is a closely related transmission scheme that possesses most of the benefits ofOFDMbut does not have the PAPR problem. Although in a multipath environment, SC-CP is very robust to frequency-selective fading, it is sensitive to the time-selective fading characteristics of the wireless channel that disturbs the orthogonality of the channel matrix (CM) and increases the computational complexity of the receiver. In this paper, we propose a time-domain low-complexity iterative algorithm to compensate for the effects of time selectivity of the channel that exploits the sparsity present in the channel convolution matrix. Simulation results show the superior performance of the proposed algorithm over the standard linear minimum mean-square error (L-MMSE) equalizer for SC-CP

Parameter estimation and equalization techniques for communication channels with multipath and multiple frequency offsets

We consider estimation of frequency offset (FO) and equalization of a wireless communication channel, within a general framework which allows for different frequency offsets for various multipaths. Such a scenario may arise due to different Doppler shifts associated with various multipaths, or in situations where multiple basestations are used to transmit identical information. For this general framework, we propose an approximative maximum-likelihood estimator exploiting the correlation property of the transmitted pilot signal. We further show that the conventional minimum mean-square error equalizer is computationally cumbersome, as the effective channel-convolution matrix changes deterministically between symbols, due to the multiple FOs. Exploiting the structural property of these variations, we propose a computationally efficient recursive algorithm for the equalizer design. Simulation results show that the proposed estimator is statistically efficient, as the mean-square estimation error attains the Crame´r-Rao lower bound. Further, we show via extensive simulations that our proposed scheme significantly outperforms equalizers not employing FO estimation

Сахар из можжевеловой ягоды: [брошюра]

0|3|Сахар из можжевеловой ягоды [c. 3]0|7|Инструкция по сбору, сушке и хранению можжевеловой ягоды [c. 7]0|8|Инструкция по переработке можжевеловой ягоды на сладкие экстракты и сироп для школ, госпиталей, столовых и домашнего быта [c. 8]0|11|Использование экстракта и сиропа [c. 11

Combinatorial design and virtual screening of potent anti-tubercular fluoroquinolone and isothiazoloquinolone compounds utilizing QSAR and pharmacophore modelling^$

<p>The virulence of tuberculosis infections resistant to conventional combination drug regimens cries for the design of potent fluoroquinolone compounds to be used as second line antimycobacterial chemotherapeutics. One of the most effective in silico methods is combinatorial design and high throughput screening by a ligand-based pharmacophore prior to experiment. The combinatorial design of a series of 3850 fluoroquinolone and isothiazoloquinolone compounds was then screened virtually by applying a topological descriptor based quantitative structure activity relationship (QSAR) for predicting highly active congeneric quinolone leads against <i>Mycobacterium fortuitum</i> and <i>Mycobacterium smegmatis</i>. The predicted highly active congeneric hits were then subjected to a comparative study between existing lead sparfloxacin with fluoroquinolone FQ hits as well as ACH-702 with predicted active isothiazoloquinolones, utilizing pharmacophore modelling to focus on the mechanism of drug binding against mycobacterial DNA gyrase. Finally, 68 compounds including 34 FQ and 34 isothiazoloquinolones were screened through high throughput screening comprising QSAR, the Lipinski rule of five and ligand-based pharmacophore modelling.</p

Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure

<div><p>Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-<i>k</i> gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-<i>k</i> gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer), time-temperature cycle and sequence are key parameters influencing the device’s output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-<i>k</i> gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.</p></div

Doping profile and Built in voltage as a function of Annealing Temperature.

<p>Doping profile and Built in voltage as a function of Annealing Temperature.</p

Leakage Resistance and I-V characteristics for different annealing temperatures.

<p>(a) Leakage Resistance at different annealing temperatures. (b) I-V characteristic curve for 600°C. (c) I-V characteristic curve for 700°C. (d) I-V characteristic curve for 800°C. (e) I-V characteristic curve for 900°C. (f) I-V characteristic curve for 1000°C.</p

MOSCAP Structure used in this work (Device Cross Section).

<p>MOSCAP Structure used in this work (Device Cross Section).</p

C-V Hysteresis for samples at different annealing Temperatures.

<p>(a) C-V profiles at different annealing ranging from 600 to 1000°C. (b) C-V profiling for 600°C. (c) C-V profiling for 700°C. (d) C-V profiling for 800°C. (e) C-V profiling for 900°C. (f) C-V profiling for 1000°C.</p

Women in Physics in the UK: Update 2005–2008

The United Kingdom continues to address gender equality and diversity in all aspects of society. The Institute of Physics (IOP) is regarded as a leading proponent of these issues, not only in physics, but in disseminating its practices to other learned societies in science, engineering, and technology. Within IOP, both the Women in Physics Group, a membership organization with 2,700 members, including students, and a dedicated Diversity Programme, that reports to a high‐level strategic Diversity Committee, are very active. In this paper we highlight some of the many initiatives that have taken place in the last few years, as well as present statistics on women in physics in the UK, demonstrating that progress has been made