D-branes, B fields, and Ext groups

In this paper we extend previous work on calculating massless boundary Ramond sector spectra of open strings to include cases with nonzero flat B fields. In such cases, D-branes are no longer well-modelled precisely by sheaves, but rather they are replaced by `twisted' sheaves, reflecting the fact that gauge transformations of the B field act as affine translations of the Chan-Paton factors. As in previous work, we find that the massless boundary Ramond sector states are counted by Ext groups -- this time, Ext groups of twisted sheaves. As before, the computation of BRST cohomology relies on physically realizing some spectral sequences. Subtleties that cropped up in previous work also appear here.Comment: 23 pages, LaTeX; v2: typos fixed; v3: reference adde

Arrangement for damping the resonance in a laser diode

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector

Diffraction coupled phase-locked semiconductor laser array

A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (~3°) and peak power levels of 1 W have been obtained for 100-µm-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed

Recent Developments In Monolithic Phase-Locked Semiconductor Laser Arrays

Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 Watts cw emitted power and less than 10 far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements

Controlled fundamental supermode operation of phase-locked arrays of gain-guided diode lasers

Uniform semiconductor laser arrays tend to oscillate in a superposition of their supermodes, thus leading to large beam divergence and spectral spread. Discrimination among the supermodes in phase-locked arrays is discussed theoretically. It is shown that supermode discrimination in gain-guided arrays, in favor of the fundamental supermode, is made possible by the near-field interference patterns which result from the complex optical fields of the gain-guided lasers. A fundamental supermode operation is demonstrated, for the first time, in GaAlAs/GaAs gain-guided laser arrays. This is achieved by control of the current (gain) profile across the array by means of individual laser contacts

Dynamic modeling of spacecraft in a collisionless plasma

A new computational model is described which can simulate the charging of complex geometrical objects in three dimensions. Two sample calculations are presented. In the first problem, the capacitance to infinity of a complex object similar to a satellite with solar array paddles is calculated. The second problem concerns the dynamical charging of a conducting cube partially covered with a thin dielectric film. In this calculation, the photoemission results in differential charging of the object

Longitudinal-mode control in integrated semiconductor laser phased arrays by phase velocity matching

The spectrum of semiconductor laser arrays with separate contacts is investigated. It is demonstrated that the individual laser currents can be selected such that the array operates in a single longitudinal mode in contrast to the multimode nature of its individual constituents. Moreover, it is possible to tune the lasing frequency by varying the laser currents. Wavelength tuning range of ~50 Å, with tuning rate of ~5 Å/mA, is demonstrated. It is suggested that these spectral features, characteristic of lasers which are coupled in parallel, result from the strong frequency dependence of their spatial mode pattern near the phase-matching frequency of their coupled waveguides