44,130 research outputs found
Noncommutative D-Brane in Non-Constant NS-NS B Field Background
We show that when the field strength H of the NS-NS B field does not vanish,
the coordinates X and momenta P of an open string endpoints satisfy a set of
mixed commutation relations among themselves. Identifying X and P with the
coordinates and derivatives of the D-brane world volume, we find a new type of
noncommutative spaces which is very different from those associated with a
constant B field background.Comment: 11 pages, Latex, minor modification
Aspects of U-duality in BLG models with Lorentzian metric 3-algebras
In our previous paper, it was shown that BLG model based on a Lorentzian
metric 3-algebra gives Dp-brane action whose worldvolume is compactified on
torus T^d (d=p-2). Here the 3-algebra was a generalized one with d+1 pairs of
Lorentzian metric generators and expressed in terms of a loop algebra with
central extensions. In this paper, we derive the precise relation between the
coupling constant of the super Yang-Mills, the moduli of T^d and some R-R flux
with VEV's of ghost fields associated with Lorentzian metric generators. In
particular, for d=1, we derive the Yang-Mills action with theta term and show
that SL(2,Z) Montonen-Olive duality is realized as the rotation of two VEV's.
Furthermore, some moduli parameters such as NS-NS 2-form flux are identified as
the deformation parameters of the 3-algebras. By combining them, we recover
most of the moduli parameters which are required by U-duality symmetry.Comment: 27 pages, v2: minor correction
Silicon solar cells for space use: Present performance and trends
A technology assessment of present performance levels and current fabrication methods and designs is presented
Circumbinary Molecular Rings Around Young Stars in Orion
We present high angular resolution 1.3 mm continuum, methyl cyanide molecular
line, and 7 mm continuum observations made with the Submillimeter Array and the
Very Large Array, toward the most highly obscured and southern part of the
massive star forming region OMC1S located behind the Orion Nebula. We find two
flattened and rotating molecular structures with sizes of a few hundred
astronomical units suggestive of circumbinary molecular rings produced by the
presence of two stars with very compact circumstellar disks with sizes and
separations of about 50 AU, associated with the young stellar objects 139-409
and 134-411. Furthermore, these two circumbinary rotating rings are related to
two compact and bright {\it hot molecular cores}. The dynamic mass of the
binary systems obtained from our data are 4 M for 139-409 and
0.5 M for 134-411. This result supports the idea that
intermediate-mass stars will form through {\it circumstellar disks} and
jets/outflows, as the low mass stars do. Furthermore, when intermediate-mass
stars are in multiple systems they seem to form a circumbinary ring similar to
those seen in young, multiple low-mass systems (e.g., GG Tau and UY Aur).Comment: Accepted by Astronomy and Astrophysic
Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration
Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure. The thermo-mechanical characteristics of the Cu TSV structure were correlated to microstructure evolution during thermal cycling and the local plasticity in Cu in a triaxial stress state. These findings were confirmed by microstructure analysis of the Cu vias and finite element analysis (FEA) of the stress characteristics. In addition, the local plasticity and deformation in and around individual TSVs were measured by synchrotron x-ray microdiffraction to supplement the wafer curvature measurements. The importance and implication of the local plasticity and residual stress on TSV reliabilities are discussed for TSV extrusion and device keep-out zone (KOZ).Microelectronics Research Cente
Branes from a non-Abelian (2,0) tensor multiplet with 3-algebra
In this paper, we study the equations of motion for non-Abelian N=(2,0)
tensor multiplets in six dimensions, which were recently proposed by Lambert
and Papageorgakis. Some equations are regarded as constraint equations. We
employ a loop extension of the Lorentzian three-algebra (3-algebra) and examine
the equations of motion around various solutions of the constraint equations.
The resultant equations take forms that allow Lagrangian descriptions. We find
various (5+d)-dimensional Lagrangians and investigate the relation between them
from the viewpoint of M-theory duality.Comment: 44+1 pages, reference added, typos corrected, and several discussions
added; v3, reference added, many typos corrected, the language improved; v4,
some typos and references corrected, final version to appear in J. Phys.
Stress-Induced Delamination Of Through Silicon Via Structures
Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin
Representations of linear dual rate system via single SISO LTI filter, conventional sampler and block sampler
In this brief, it is proved that a linear dual-rate system can be represented via a series cascade of: 1) a conventional expander, a single-input single-output (SISO) linear time-invariant (LTI) filter and a block decimator, or 2) a block expander, an SISO LTI filter and a conventional decimator. Hence, incompatible nonuniform filter banks could achieve perfect reconstruction via LTI filters, conventional samplers and block samplers without expanding the input-output dimension of a subsystem of linear dual-rate systems or converting the nonuniform filter banks to uniform filter banks. The main advantage of the proposed representations is to avoid complicated design of the circuit layout caused by connecting subsystems with large input-output dimension or a lot of subsystems togethe
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