359 research outputs found
Gallium/aluminum interdiffusion between n-GaN and sapphire
The distribution profiles of Ga and Al near the interface of the n-GaN/sapphire system were measured by x-ray energy dispersive spectroscopy (XEDS). The results are obtained by the corrected XED spectra. First, the gallium diffusing into the sapphire substrate obeys the law of remainder probability function. The gallium diffusion coefficient DGa=2.30×10-13 cm2s-1 was calculated by theoretical fitting. Second, the diffusion is associated with the GaN growth process at high temperature. Compared to the diffusion of Ga into the sapphire substrate, much less Al antidiffusion from the substrate to the GaN film, with diffusion coefficient DA1 approximately equal to 4.8×10-15 cm2s-1, was observed in the film. © 1998 American Institute of Physics.published_or_final_versio
Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular adsorption on the transport properties of carbon and boron nitride nanotubes
The effect of molecular adsorption on the transport properties of single walled carbon and boron nitride nanotubes (CNTs and BNNTs) is investigated using density functional theory and nonequilibrium Green’s function methods. The calculated I-V characteristics predict noticeable changes in the conductivity of semiconducting BNNTs due to physisorption of nucleic acid base molecules. Specifically, guanine which binds to the side wall of BNNT significantly enhances its conductivity by introducing conduction channels near the Fermi energy of the bioconjugated system. For metallic CNTs, a large background current masks relatively small changes in current due to the biomolecular adsorption. The results therefore suggest the suitability of BNNTs for biosensing applications
Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN
In our recent report, [Xu et al., Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n+ layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n+ conductivity is not only from the contribution of nitride-site oxygen (ON), but also from the gallium-site silicon (SiGa) donors, with activation energies 2 meV (for ON) and 42 meV (for SiGa), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. SiGa and ON should also be shallow donors and VGa-O or VGa-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration NA=1.8×1017 cm-3, the second donor concentration ND2=1.0×1018 cm-3, and the compensation ratio C=NA/ND1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. © 2001 American Institute of Physics.published_or_final_versio
Transcriptomic-metabolomic reprogramming in EGFR-mutant NSCLC early adaptive drug escape linking TGFβ2-bioenergetics-mitochondrial priming.
The impact of EGFR-mutant NSCLC precision therapy is limited by acquired resistance despite initial excellent response. Classic studies of EGFR-mutant clinical resistance to precision therapy were based on tumor rebiopsies late during clinical tumor progression on therapy. Here, we characterized a novel non-mutational early adaptive drug-escape in EGFR-mutant lung tumor cells only days after therapy initiation, that is MET-independent. The drug-escape cell states were analyzed by integrated transcriptomic and metabolomics profiling uncovering a central role for autocrine TGFβ2 in mediating cellular plasticity through profound cellular adaptive Omics reprogramming, with common mechanistic link to prosurvival mitochondrial priming. Cells undergoing early adaptive drug escape are in proliferative-metabolic quiescent, with enhanced EMT-ness and stem cell signaling, exhibiting global bioenergetics suppression including reverse Warburg, and are susceptible to glutamine deprivation and TGFβ2 inhibition. Our study further supports a preemptive therapeutic targeting of bioenergetics and mitochondrial priming to impact early drug-escape emergence using EGFR precision inhibitor combined with broad BH3-mimetic to interrupt BCL-2/BCL-xL together, but not BCL-2 alone
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Bhlhb5 Regulates the Postmitotic Acquisition of Area Identities in Layers II-V of the Developing Neocortex
While progenitor-restricted factors broadly specify area identities in developing neocortex, the downstream regulatory elements involved in acquisition of those identities in post-mitotic neurons are largely unknown. Here, we identify Bhlhb5, a transcription factor expressed in layers II–V, as a post-mitotic regulator of area identity. Bhlhb5 is initially expressed in a high caudomedial to low rostrolateral gradient that transforms into a sharp border between sensory and rostral motor cortices. Bhlhb5-null mice exhibit aberrant expression of area-specific genes and structural organization in the somatosensory and caudal motor cortices. In somatosensory cortex, Bhlhb5-null mice display
post-synaptic disorganization of vibrissal barrels. In caudal motor cortex, Bhlhb5-null mice exhibit anomalous differentiation of corticospinal motor neurons, accompanied by failure of corticospinal tract formation. Together, these results demonstrate Bhlhb5’s function as an area-specific transcription factor that regulates the post-mitotic acquisition of area identities and elucidate the genetic hierarchy between progenitors and post-mitotic neurons driving neocortical arealization.Stem Cell and Regenerative Biolog
Confusion Control in Generalized Petri Nets Using Synchronized Events
The loss of conflicting information in a Petri net (PN), usually called confusions, leads to incomplete and faulty system behavior. Confusions, as an unfortunate phenomenon in discrete event systems modeled with Petri nets, are caused by the frequent interlacement of conflicting and concurrent transitions. In this paper, confusions are defined and investigated in bounded generalized PNs. A reasonable control strategy for conflicts and confusions in a PN is formulated by proposing elementary conflict resolution sequences (ECRSs) and a class of local synchronized Petri nets (LSPNs). Two control algorithms are reported to control the appeared confusions by generating a series of external events. Finally, an example of confusion analysis and control in an automated manufacturing system is presented
Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP
Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed.published_or_final_versio
Spatially Constrained Organic Diquat Anolyte for Stable Aqueous Flow Batteries
Redox-active organic materials (ROMs) are becoming increasingly attractive for use in redox flow batteries as promising alternatives to traditional inorganic counterparts. However, the reported ROMs are often accompanied by challenges, including poor solubility and stability. Herein, we demonstrate that the commonly used diquat herbicides, with solubilities of >2 M in aqueous electrolytes, can be used as stable anolyte materials in organic flow batteries. When coupled with a ferrocene-derived catholyte, the flow cells with the diquat anolyte demonstrate long galvanic cycling with high capacity retention. Notably, the mechanistic underpinnings of this remarkable stability are attributed to the improved π-conjugation that originated from the near-planar molecular conformations of the spatially constrained 2,2′-bipyridyl rings, suggesting a viable structural engineering strategy for designing stable organic materials
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