P-channel silicone gate FET

Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate placement and gate overlap. Technique provides self-aligned gate, eliminating complexity of mask aligning. Devices produced by this process are considerably faster than conventional MOSFET's and process increases yield

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

Progress in developing the application of ion implantation techniques to silicon gate CMOS/SOS processing is described. All of the conventional doping techniques such as in situ doping of the epi-film and diffusion by means of doped oxides are replaced by ion implantation. Various devices and process parameters are characterized to generate an optimum process by the use of an existing SOS test array. As a result, excellent circuit performance is achieved. A general description of the all ion implantation process is presented

Two Conditions for Galaxy Quenching: Compact Centres and Massive Haloes

We investigate the roles of two classes of quenching mechanisms for central and satellite galaxies in the SDSS ($z<0.075$): those involving the halo and those involving the formation of a compact centre. For central galaxies with inner compactness $\Sigma_{\rm 1kpc} \sim 10^{9-9.4}M_{\odot} {\rm kpc}^{-2}$, the quenched fraction $f_{q}$ is strongly correlated with $\Sigma_{\rm 1kpc}$ with only weak halo mass $M_{\rm h}$ dependence. However, at higher and lower $\Sigma_{\rm 1kpc}$, sSFR is a strong function of $M_{\rm h}$ and mostly independent of $\Sigma_{\rm 1kpc}$. In other words, $\Sigma_{\rm 1kpc} \sim 10^{9-9.4} M_{\odot} {\rm kpc}^{-2}$ divides galaxies into those with high sSFR below and low sSFR above this range. In both the upper and lower regimes, increasing $M_{\rm h}$ shifts the entire sSFR distribtuion to lower sSFR without a qualitative change in shape. This is true even at fixed $M_{*}$, but varying $M_{*}$ at fixed $M_{\rm h}$ adds no quenching information. Most of the quenched centrals with $M_{\rm h} > 10^{11.8}M_{\odot}$ are dense ($\Sigma_{\rm 1kpc} > 10^{9}~ M_{\odot} {\rm kpc}^{-2}$), suggesting compaction-related quenching maintained by halo-related quenching. However, 21% are diffuse, indicating only halo quenching. For satellite galaxies in the outskirts of halos, quenching is a strong function of compactness and a weak function of host $M_{\rm h}$. In the inner halo, $M_{\rm h}$ dominates quenching, with $\sim 90\%$ of the satellites being quenched once $M_{\rm h} > 10^{13}M_{\odot}$. This regional effect is greatest for the least massive satellites. As demonstrated via semi-analytic modelling with simple prescriptions for quenching, the observed correlations can be explained if quenching due to central compactness is rapid while quenching due to halo mass is slow.Comment: 16 pages, 11 figures, MNRAS accepte

Quantum Phase Transitions of Hard-Core Bosons in Background Potentials

We study the zero temperature phase diagram of hard core bosons in two dimensions subjected to three types of background potentials: staggered, uniform, and random. In all three cases there is a quantum phase transition from a superfluid (at small potential) to a normal phase (at large potential), but with different universality classes. As expected, the staggered case belongs to the XY universality, while the uniform potential induces a mean field transition. The disorder driven transition is clearly different from both; in particular, we find z~1.4, \nu~1, and \beta~0.6.Comment: 4 pages (6 figures); published version-- 2 references added, minor clarification

Theoretical studies of spin-dependent electronic transport in ferromagnetically contacted graphene flakes

Based on a tight-binding model and a recursive Green's function technique, spin-depentent ballistic transport through tinny graphene sheets (flakes) is studied. The main interest is focussed on: electrical conductivity, giant magnetoresistance (GMR) and shot noise. It is shown that when graphene flakes are sandwiched between two ferromagnetic electrodes, the resulting GMR coefficient may be quite significant. This statement holds true both for zigzag and armchair chiralities, as well as for different aspect (width/length) ratios. Remarkably, in absolute values the GMR of the armchair-edge graphene flakes is systematically greater than that corresponding to the zigzag-edge graphene flakes. This finding is attributed to the different degree of conduction channel mixing for the two chiralities in question. It is also shown that for big aspect ratio flakes, 3-dimensional end-contacted leads, very much like invasive contacts, result in non-universal behavior of both conductivity and Fano factor.Comment: to appear in PR