Microwave neural processing and broadcasting with spintronic nano-oscillators

Can we build small neuromorphic chips capable of training deep networks with billions of parameters? This challenge requires hardware neurons and synapses with nanometric dimensions, which can be individually tuned, and densely connected. While nanosynaptic devices have been pursued actively in recent years, much less has been done on nanoscale artificial neurons. In this paper, we show that spintronic nano-oscillators are promising to implement analog hardware neurons that can be densely interconnected through electromagnetic signals. We show how spintronic oscillators maps the requirements of artificial neurons. We then show experimentally how an ensemble of four coupled oscillators can learn to classify all twelve American vowels, realizing the most complicated tasks performed by nanoscale neurons

Spin torque resonant vortex core expulsion for an efficient radio-frequency detection scheme

Spin-polarised radio-frequency currents, whose frequency is equal to that of the gyrotropic mode, will cause an excitation of the core of a magnetic vortex confined in a magnetic tunnel junction. When the excitation radius of the vortex core is greater than that of the junction radius, vortex core expulsion is observed, leading to a large change in resistance, as the layer enters a predominantly uniform magnetisation state. Unlike the conventional spin-torque diode effect, this highly tunable resonant effect will generate a voltage which does not decrease as a function of rf power, and has the potential to form the basis of a new generation of tunable nanoscale radio-frequency detectors

Temperature dependence of the interface moments in Co2MnSi thin films

Copyright © 2008 American Institute of PhysicsX-ray magnetic circular dichroism (XMCD) is utilized to explore the temperature dependence of the interface moments in Co2MnSi (CMS) thin films capped with aluminum. By increasing the thickness of the capping layer, we demonstrate enhanced interface sensitivity of the measurements. L2(1)-ordered CMS films show no significant temperature dependence of either the Co or Mn interface moments. However, disordered CMS films show a decreased moment at low temperature possibly caused by increased Mn-Mn antiferromagnetic coupling. It is suggested that for ordered L2(1) CMS films the temperature dependence of the tunneling magnetoresistance is not related to changes in the interface moments

Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin–flip tunnelling process