'Spillout' effect in gold nanoclusters embedded in c-Al2O3(0001) matrix

Gold nanoclusters are grown by 1.8 MeV Au^\sup{2+} implantation on c-Al\sub{2}O\sub{3}(0001)substrate and subsequent air annealing at temperatures 1273K. Post-annealed samples show plasmon resonance in the optical (561-579 nm) region for average cluster sizes ~1.72-2.4 nm. A redshift of the plasmon peak with decreasing cluster size in the post-annealed samples is assigned to the 'spillout' effect (reduction of electron density) for clusters with ~157-427 number of Au atoms fully embedded in crystalline dielectric matrix with increased polarizability in the embedded system.Comment: 14 Pages (figures included); Accepted in Chem. Phys. Lett (In Press

Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111)

Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trapezoid. The island edges are aligned along $Si[110]$ directions. We have observed elongated islands with aspect ratios as large as 8:1. These islands, instead of growing along three equivalent [110] directions on the Si(111) substrate, grow only along one preferential direction. This has been attributed to the vicinality of the substrate surface.Comment: revtex version 3.0, 11 pages 4 figures available on request from [email protected] - IP/BBSR/93-6

Shape variation in epitaxial microstructures of gold silicide grown on br-passivated Si(1 1 1) surfaces

Kinetic Monte Carlo simulations for growth on substrates of three-fold symmetry predict the growth of islands of various shapes depending on the growth temperature [Phys. Rev. Lett. 71 (1993) 2967]. On Br-Si(1 1 1) substrates growth of epitaxial gold silicide islands of equilateral triangular and trapezoidal shapes have earlier been observed by annealing at the Au-Si eutectic temperature, 363 °C [Phys. Rev. B 51 (1995) 14330]. We carried out annealing with temperature variation within a small window--(363 ± 30) °C. This has led to island growth of additional shapes like regular hexagon, elongated hexagon, walled hexagon and dendrite. Some of the observed island shapes have not been predicted

Flux dependent MeV self-ion- induced effects on Au nanostructures: Dramatic mass transport and nano-silicide formation

We report a direct observation of dramatic mass transport due to 1.5 MeV Au2+ ion impact on isolated Au nanostructures of an average size 7.6 nm and a height 6.9 nm that are deposited on Si (111) substrate under high flux (3.2x10^10 to 6.3x10^12 ions cm-2 s-1) conditions. The mass transport from nanostructures found to extend up to a distance of about 60 nm into the substrate, much beyond their size. This forward mass transport is compared with the recoil implantation profiles using SRIM simulation. The observed anomalies with theory and simulations are discussed. At a given energy, the incident flux plays a major role in mass transport and its re-distribution. The mass transport is explained on the basis of thermal effects and creation of rapid diffusion paths at nano-scale regime during the course of ion irradiation. The unusual mass transport is found to be associated with the formation of gold silicide nanoalloys at sub-surfaces. The complexity of the ion-nanostructure interaction process has been discussed with a direct observation of melting (in the form of spherical fragments on the surface) phenomena. The transmission electron microscopy, scanning transmission electron microscopy and Rutherford backscattering spectroscopy methods have been used.Comment: 16 pages, 6 Figure

Characterization of MHz pulse repetition rate femtosecond laser-irradiated gold-coated silicon surfaces

In this study, MHz pulse repetition rate femtosecond laser-irradiated gold-coated silicon surfaces under ambient condition were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), and X-ray photoelectron spectroscopy (XPS). The radiation fluence used was 0.5 J/cm2 at a pulse repetition rate of 25 MHz with 1 ms interaction time. SEM analysis of the irradiated surfaces showed self-assembled intermingled weblike nanofibrous structure in and around the laser-irradiated spots. Further TEM investigation on this nanostructure revealed that the nanofibrous structure is formed due to aggregation of Au-Si/Si nanoparticles. The XRD peaks at 32.2°, 39.7°, and 62.5° were identified as (200), (211), and (321) reflections, respectively, corresponding to gold silicide. In addition, the observed chemical shift of Au 4f and Si 2p lines in XPS spectrum of the irradiated surface illustrated the presence of gold silicide at the irradiated surface. The generation of Si/Au-Si alloy fibrous nanoparticles aggregate is explained by the nucleation and subsequent condensation of vapor in the plasma plume during irradiation and expulsion of molten material due to high plasma pressure

Ferromagnetism in cobalt doped n-GaN

Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering.Comment: 11 pages, 3 figures, Journa