DAC-Less amplifier-less generation and transmission of QAM signals using sub-volt silicon-organic hybrid modulators

We demonstrate generation and transmission of optical signals by directly interfacing highly efficient silicon-organic hybrid (SOH) modulators to binary output ports of a field-programmable gate array. Using an SOH Mach-Zehnder modulator (MZM) and an SOH IQ modulator we generate ON-OFF- keying and binary phase-shift keying signals as well as quadrature phase-shift keying and 16-state quadrature amplitude modulation (16QAM) formats. Peak-to-peak voltages amount to only 0.27 V-pp for driving the MZM and 0.41 V-pp for the IQ modulator. Neither digital-to-analog converters nor drive amplifiers are required, and the RF energy consumption in the modulator amounts to record-low 18 fJ/bit for 16QAM signaling

Silicon Photonics for Coherent Terahertz Generation and Detection

Silicon-plasmonic internal photoemission devices can act as photomixers for generating terahertz frequency carriers (T-waves) for transmitters (Tx), or they function as receivers (Rx) for coherently downconverting Twave signals to the baseband. In a first demonstration, we monolithically integrate a Tx and a Rx on a silicon chip and operate them in a carrier frequency range up to 1THz . With a co-integrated transmission line both components can be connected

Optical coherence tomography system mass-producible on a silicon photonic chip

Miniaturized integrated optical coherence tomography (OCT) systems have the potential to unlock a wide range of both medical and industrial applications. This applies in particular to multi-channel OCT schemes, where scalability and low cost per channel are important, to endoscopic implementations with stringent size demands, and to mechanically robust units for industrial applications. We demonstrate that fully integrated OCT systems can be realized using the state-of-the-art silicon photonic device portfolio. We present two different implementations integrated on a silicon-on-insulator (SOI) photonic chip, one with an integrated reference path (OCTint) for imaging objects in distances of 5 mm to 10 mm from the chip edge, and another one with an external reference path (OCText) for use with conventional scan heads. Both OCT systems use integrated photodiodes and an external swept-frequency source. In our proof-of-concept experiments, we achieve a sensitivity of −64 dB (−53 dB for OCTint) and a dynamic range of 60 dB (53 dB for OCTint). The viability of the concept is demonstrated by imaging of biological and technical objects

Diffusion in nanopores recorded by microscopic measuring techniques

The poster presents two measuring techniques which, by their very nature, can be focused on, exclusively, microscopic dimensions, including the interior of the individual particles (crystallites) of the material under study. Correspondingly, they are referred to as “microscopic measuring techniques”. The examples presented refer, in particular, to the potentials of these techniques for investigating mass transfer in complex systems

Ultra-short silicon-organic hybrid (SOH) modulator for bidirectional polarization-independent operation

We propose a bidirectional, polarization-independent, recirculating IQ-modulator scheme based on the silicon-organic hybrid (SOH) platform. We demonstrate the viability of the concept by using an SOH Mach-Zehnder modulator, operated at 10 GBd BPSK and 2ASK-2PSK

Generation of two isogenic iPSC lines with either a heterozygous or a homozygous E280A mutation in the PSEN1 gene.

Alzheimer's disease (AD) is the most common form of dementia. Mutations in the gene PSEN1 encoding Presenilin1 are known to cause familial forms of AD with early age of onset. The most common mutation in the PSEN1 gene is the E280A mutation. iPSCs are an optimal choice for modeling AD, as they can be differentiated in vitro into neural cells. Here, we report the generation of two isogenic iPSC lines with either a homozygous or a heterozygous E280A mutation in the PSEN1 gene. The mutation was introduced into an iPSC line from a healthy individual using the CRISPR-Cas9 technology.Resource tableUnlabelled TableUnique stem cell lines identifier 1. BIONi010-C + homozygous E280A = BIONi010-C-29 2. BIONi010-C + heterozygous E280A = BIONi010-C-30Alternative names of stem cell lines 1. BIONi010-C E280 +/+ (homozygous line) 2. BIONi010-C E280 +/− (heterozygous line)InstitutionBioneer A/S Hørsholm Denmark and University of Copenhagen (UCPH) Copenhagen DenmarkContact information of distributorContact at Bioneer: Benjamin Schmid,[email protected]– Contact at UCPH: Kristine Freude,[email protected] of cell linesiPSCsOriginHumanCell SourceFibroblastsClonalityClonalMethod of reprogrammingEpisomal plasmids (Okita et al., 2011)Multiline rationaleMutated isogenic clonesGene modificationYESType of modificationInduced point mutationAssociated diseaseAlzheimer's disease (AD)Gene/locusPSEN1/Chr14:73664808Method of modificationCRISPR-Cas9Name of transgene or resistanceN/AInducible/constitutive systemN/ADate archived/stock dateSeptember 2017Cell line repository/bank 1. BIONi010-C-29:https://hpscreg.eu/cell-line/BIONi010-C-29 2. BIONi010-C-30:https://hpscreg.eu/cell-line/BIONi010-C-30Ethical approvalThe study was approved by the Ethics Committee of the Capital Region of Denmark (H-4-2011-157), and written informed consent was obtained from the participant before enrolmen

Field-effect silicon-plasmonic photodetector for coherent T-wave reception

Plasmonic internal photoemission detectors (PIPED) have recently been shown to combine compact footprint and high bandwidth with monolithic co-integration into silicon photonic circuits, thereby opening an attractive route towards optoelectronic generation and detection of waveforms in the sub-THz and THz frequency range, so-called T-waves. In this paper, we further expand the PIPED concept by introducing a metal-oxide-semiconductor (MOS) interface with an additional gate electrode that allows to control the carrier dynamics in the device and the degree of internal photoemission at the metal-semiconductor interfaces. We experimentally study the behavior of dedicated field-effect (FE-)PIPED test structures and develop a physical understanding of the underlying principles. We find that the THz down-conversion efficiency of FE-PIPED can be significantly increased when applying a gate potential. Building upon the improved understanding of the device physics, we further perform simulations and show that the gate field increases the carrier density in the conductive channel below the gate oxide to the extent that the device dynamics are determined by ultra-fast dielectric relaxation rather than by the carrier transit time. In this regime, the bandwidth can be increased to more than 1 THz. We believe that our experiments open a new path towards understanding the principles of internal photoemission in plasmonic structures, leading to PIPED-based optoelectronic signal processing systems with unprecedented bandwidth and efficiency