Collective dynamics of large aspect ratio dusty plasma in an inhomogeneous plasma background: Formation of the co--rotating vortex series

In this paper, the collective dynamics of the large aspect ratio dusty plasma is studied over a wide range of discharge parameters. An inductively coupled diffused plasma, which creates an electrostatic trap to confine the negatively charged grains, is used to form a large volume (or large aspect ratio) dusty plasma at low pressure. For introducing the dust grains into the potential well, a unique technique using a secondary DC glow discharge plasma is employed. The dust dynamics is recorded in a 2-dimension (2D) plane at a given axial location. The dust fluid exhibits wave like behavior at low pressure (p < 0.06 mbar) and high rf power (P > 3 W). The mixed motion, waves and vortices, are observed at an intermediate gas pressure(p = 0.08 mbar) and low power (P < 3 W). Above the threshold value of gas pressure (p > 0.1 mbar), the clockwise and anti-clockwise co-rotating vortex series are observed on the edges of the dust cloud, whereas the particles in central region show the random motion. These vortices are only observed above a threshold width of the dust cloud. The streaming ions are considered the available free energy source to excite the waves in dust grain medium. The occurrence of the co-rotating vortices is understood on the basis of the charge gradient of dust particles which is orthogonal to the gravity. The charge gradient is a consequence of the plasma inhomogeneity from the central region to the outer edge of dust fluid. Since, a vortex has the characteristic size in the dissipative medium; therefore, a series of the co-rotating vortex on the both sides of dusty plasma is observed. The experimental results on the vortex formation and its multiplicity are compared to an available theoretical model and are found to be in close agreement.Comment: 12 pages, 10 Figures. arXiv admin note: text overlap with arXiv:1701.0323

Chain of Hardy-type local reality constraints for nn qubits

Non-locality without inequality is an elegant argument introduced by L. Hardy for two qubit systems, and later generalised to $n$ qubits, to establish contradiction of quantum theory with local realism. Interestingly, for $n=2$ this argument is actually a corollary of Bell-type inequalities, viz. the CH-Hardy inequality involving Bell correlations, but for $n$ greater than 2 it involves $n$-particle probabilities more general than Bell-correlations. In this paper, we first derive a chain of completely new local realistic inequalities involving joint probabilities for $n$ qubits, and then, associated to each such inequality, we provide a new Hardy-type local reality constraint without inequalities. Quantum mechanical maximal violations of the chain of inequalities and of the associated constraints are also studied by deriving appropriate Cirel'son type theorems. These results involving joint probabilities more general than Bell correlations are expected to provide a new systematic tool to investigate entanglement.Comment: 10 pages, Late

Vacancy defect reconstruction and its effect on electron transport in Si-C nanotubes

We investigate the vacancy defect reconstruction and its effect on I-V characteristics in a (4, 0) zigzag and (5, 5) armchair silicon-carbide nanotubes (SiCNTs) by applying self consistent non-equilibrium Green’s function formalism in combination with the density-functional theory to a two probe molecular junction constructed from SiCNTs. The results show that single vacancies and di-vacancies in SiCNTs have different reconstructions. A single vacancy when optimized, reconstructs into a 5-1DB configuration in both zigzag and armchair SiCNTs, and a di-vacancy reconstructs into a 5-8-5 configuration in zigzag and into a 5-2DB configuration in armchair SiCNTs. Introduction of vacancy increases the band gap of (4, 0) metallic SiCNT and decreases the bandgap of (5, 5) semiconducting SiCNT, bias voltage dependent current characteristic show reduction in overall current in metallic SiCNT and an increase in overall current in semiconducting SiCNT. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2790