Ferromagnetic insulator-based superconducting junctions as sensitive electron thermometers

We present an exhaustive theoretical analysis of charge and thermoelectric transport in a normal metal-ferromagnetic insulator-superconductor (NFIS) junction, and explore the possibility of its use as a sensitive thermometer. We investigated the transfer functions and the intrinsic noise performance for different measurement configurations. A common feature of all configurations is that the best temperature noise performance is obtained in the non-linear temperature regime for a structure based on an europium chalcogenide ferromagnetic insulator in contact with a superconducting Al film structure. For an open-circuit configuration, although the maximal intrinsic temperature sensitivity can achieve $10$nKHz$^{-1/2}$, a realistic amplifying chain will reduce the sensitivity up to $10$$\mu$KHz$^{-1/2}$. To overcome this limitation we propose a measurement scheme in a closed-circuit configuration based on state-of-art SQUID detection technology in an inductive setup. In such a case we show that temperature noise can be as low as $35$nKHz$^{-1/2}$. We also discuss a temperature-to-frequency converter where the obtained thermo-voltage developed over a Josephson junction operated in the dissipative regime is converted into a high-frequency signal. We predict that the structure can generate frequencies up to $\sim 120$GHz, and transfer functions up to $200$GHz/K at around $\sim 1$K. If operated as electron thermometer, the device may provide temperature noise lower than $35$nKHz$^{-1/2}$ thereby being potentially attractive for radiation sensing applications.Comment: 11 pages, 10 color figure

Majorana bound states in hybrid 2D Josephson junctions with ferromagnetic insulators

We consider a Josephson junction consisting of superconductor/ferromagnetic insulator (S/FI) bilayers as electrodes which proximizes a nearby 2D electron gas. By starting from a generic Josephson hybrid planar setup we present an exhaustive analysis of the the interplay between the superconducting and magnetic proximity effects and the conditions under which the structure undergoes transitions to a non-trivial topological phase. We address the 2D bound state problem using a general transfer matrix approach that reduces the problem to an effective 1D Hamiltonian. This allows for straightforward study of topological properties in different symmetry classes. As an example we consider a narrow channel coupled with multiple ferromagnetic superconducting fingers, and discuss how the Majorana bound states can be spatially controlled by tuning the superconducting phases. Following our approach we also show the energy spectrum, the free energy and finally the multiterminal Josephson current of the setup.Comment: 8 pages; 5 figure

Charge tunneling in fractional edge channels

We explain recent experimental observations on effective charge of edge states tunneling through a quantum point contact in the weak backscattering regime. We focus on the behavior of the excess noise and on the effective tunneling charge as a function of temperature and voltage. By introducing a minimal hierarchical model different filling factors, \nu=p/(2p+1), in the Jain sequence are treated on equal footing, in presence also of non-universal interactions. The agreement found with the experiments for \nu=2/3 and \nu=2/5 reinforces the description of tunneling of bunching of quasiparticles at low energies and quantitatively defines the condition under which one expects to measure the fundamental quasiparticle charge. We propose high-order current cumulant measurement to cross-check the validity of the above scenario and to better clarify the peculiar temperature behavior of the effective charges measured in the experiments.Comment: 6 pages, 3 figure

Full Counting Statistics in Strongly Interacting Systems: Non-Markovian Effects

We present a theory of full counting statistics for electron transport through interacting electron systems with non-Markovian dynamics. We illustrate our approach for transport through a single-level quantum dot and a metallic single-electron transistor to second order in the tunnel-coupling strength, and discuss under which circumstances non-Markovian effects appear in the transport properties.Comment: 4 pages, 2 figures, LaTeX; typos added, references adde

Bipolar thermoelectricity in S/I/NS and S/I/SN superconducting tunnel junctions

Recent studies have shown the potential for bipolar thermoelectricity in superconducting tunnel junctions with asymmetric energy gaps. The thermoelectric performance of these systems is significantly impacted by the inverse proximity effects present in the normal-superconducting bilayer, which is utilized to adjust the gap asymmetry in the junction. Here, we identify the most effective bilayer configurations, and we find that directly tunnel-coupling the normal metal side of the bilayer with the other superconductor is more advantageous compared to the scheme used before. By utilizing quasiclassical equations, we examined the nonlinear thermoelectric junction performance as a function of the normal metal film thickness and the quality of the normal-superconducting interface within the bilayer, thereby determining the optimal design to observe and maximize this nonequilibrium effect. Our results offer a roadmap to achieve improved thermoelectric performance in superconducting tunnel junctions, with promising implications for a number of applications.Comment: 5 pages, 3 figure

Microwave-assisted thermoelectricity in SIS' tunnel junctions

Asymmetric superconducting tunnel junctions with gaps $\Delta_1>\Delta_2$ have been proven to show a peculiar nonlinear bipolar thermoelectric effect. This arises due to the spontaneous breaking of electron-hole symmetry in the system, and it is maximized at the matching-peak bias $|V|=V_p=(\Delta_1-\Delta_2)/e$. In this paper, we investigate the interplay of photon-assisted tunneling (PAT) and bipolar thermoelectric generation. In particular, we show how thermoelectricity, at the matching peak, is supported by photon absorption/emission processes at the frequency-shifted sidebands $V=\pm V_p+n\hbar\omega$, $n \in \mathbb{Z}$. This represents a sort of microwave-assisted thermoelectricity. We show the existence of multiple stable solutions, being associated with different photon sidebands, when a load is connected to the junction. Finally, we discuss how the nonlinear cooling effects are modified by the PAT. The proposed device can detect millimeter wavelength signals by converting a temperature gradient into a thermoelectric current or voltage.Comment: 7 pages, 3 figure

Environmental induced renormalization effects in quantum Hall edge states

We propose a general mechanism for renormalization of the tunneling exponents in edge states of the fractional quantum Hall effect. Mutual effects of the coupling with out-of-equilibrium 1/f noise and dissipation are considered both for the Laughlin sequence and for composite co- and counter-propagating edge states with Abelian or non-Abelian statistics. For states with counter-propagating modes we demonstrate the robustness of the proposed mechanism in the so called disorder-dominated phase. Prototypes of these states, such as \nu=2/3 and \nu=5/2, are discussed in detail and the rich phenomenology induced by the presence of a noisy environment is presented. The proposed mechanism justifies the strong renormalizations reported in many experimental observations carried out at low temperatures. We show how environmental effects could affect the relevance of the tunneling excitations, leading to important implications in particular for the \nu=5/2 case.Comment: 14 pages, 4 figure

Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor

We analyze a single electron transistor composed of two semi-infinite one dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.Comment: 4 pages, 3 figures. To appear in the Phys. Rev. Let