ab initio Electronic Transport Model with Explicit Solution to the Linearized Boltzmann Transport Equation

Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE) either rely heavily on experimental data (i.e., semi-empirical), or utilize simplifying assumptions, such as the constant relaxation time approximation (BTE-cRTA). While these models offer valuable physical insights and accurate calculations of transport properties in some cases, they often lack sufficient accuracy -- particularly in capturing the correct trends with temperature and carrier concentration. We present here a general transport model for calculating low-field electrical drift mobility and Seebeck coefficient of n-type semiconductors, by explicitly considering all relevant physical phenomena (i.e. elastic and inelastic scattering mechanisms). We first rewrite expressions for the rates of elastic scattering mechanisms, in terms of ab initio properties, such as the band structure, density of states, and polar optical phonon frequency. We then solve the linear BTE to obtain the perturbation to the electron distribution -- resulting from the dominant scattering mechanisms -- and use this to calculate the overall mobility and Seebeck coefficient. Using our model, we accurately calculate electrical transport properties of the compound n-type semiconductors, GaAs and InN, over various ranges of temperature and carrier concentration. Our fully predictive model provides high accuracy when compared to experimental measurements on both GaAs and InN, and vastly outperforms both semi-empirical models and the BTE-cRTA. Therefore, we assert that this approach represents a first step towards a fully ab initio carrier transport model that is valid in all compound semiconductors

The efficacy of low vision devices for students in specialized schools for students who are blind in Kathmandu Valley, Nepal

In Nepal, children with low vision attend specialized schools for students who are totally blind and are treated as if they were totally blind. This study identified children with low vision and provided low vision devices to them. Of the 22% of the students in the school who had low vision, 78.5% benefited from the devices. Proper devices and counseling improved the quality of life of a significant number of these students. ©2008 AFB, All Rights Reserved

Coherence of Spin Qubits in Silicon

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer.Comment: Submitted to J Cond Matter on Nov 15th, 200

Good-bye, Wild Women, Good-bye!

https://digitalcommons.library.umaine.edu/mmb-vp/3127/thumbnail.jp

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time T_M of the donor electron spin dependent on both f and the crystal axis relative to the external magnetic field.Comment: 5 pages, 4 figure

Transition‐Metal‐Free Cross‐Coupling of Benzothiophenes and Styrenes in a Stereoselective Synthesis of Substituted (E,Z)‐1,3‐Dienes

A transition metal‐free one‐pot stereoselective approach to substituted (E,Z)‐1,3‐dienes was developed by using an interrupted Pummerer reaction/ligand‐coupling strategy. Readily available benzothiophene S‐oxides, which can be conveniently prepared by oxidation of the parent benzothiophenes, undergo Pummerer coupling with styrenes. Reaction of the resultant sulfonium salts with alkyllithium/magnesium reagents generates underexploited hypervalent sulfurane intermediates that undergo selective ligand coupling, resulting in dismantling of the benzothiophene motif and the formation of decorated (E,Z)‐1,3‐dienes