Comparison of the activities of C2N and BCNO towards Congo red degradation

An n-type organic carbon nitride semiconductor, C2N, was synthesized by the pyrolysis of uric acid, and its properties were investigated by scanning electron and transmission electron microscopies, X-ray powder diffraction, and vibrational, UV-visible and X-ray photoelectron spectroscopies. This novel material, composed of crystalline flakes, featured a broad absorption centered at 700¿nm, possibly due to charge transfer, and a 2.49¿eV band gap. Its catalytic performance was assessed for the treatment of effluents with the diazo dye Congo red, comparing it with that of boron carbon nitrogen oxide, BCNO. Both wide band gap semiconductors exhibited decolorizing activity in the dark, although the mechanisms were different and were not photocatalytic: BCNO was more effective towards the adsorption-coordination due to the presence of B-O, while C2N was effective towards the adsorption and the advancement of the oxidation reaction. Their kinetic constants (0.19 and 0.02 min-1 for BCNO and C2N, respectively) were comparable to those of intermetallic compounds studied for azo dyes degradation in dark conditions. In view of the high color removal efficiency (97% after 20¿min) and good reusability of BCNO, this study suggests a potential application of this catalyst for wastewater treatment, alone or in combination with C2N

Nitrogen-carbon graphite-like semiconductor synthesized from uric acid

A new carbon-nitrogen organic semiconductor has been synthesized by pyrolysis of uric acid. This layered carbon-nitrogen material contains imidazole-, pyridine (naphthyridine)- and graphitic-like nitrogen, as evinced by infrared and X-ray photoelectron spectroscopies. Quantum chemistry calculations support that it would consist of a 2D polymeric material held together by hydrogen bonds. Layers are stacked with an interplanar distance between 3.30 and 3.36 Å, as in graphite and coke. Terahertz spectroscopy shows a behavior similar to that of amorphous carbons, such as coke, with non-interacting layers. This material features substantial differences from polymeric carbon nitride, with some characteristics closer to those of nitrogen-doped graphene, in spite of its higher nitrogen content. The direct optical band gap, dependent on the polycondensation temperature, ranges from 2.10 to 2.32 eV. Although in general the degree of crystallinity is low, in the material synthesized at 600 °C some spots with a certain degree of crystallinity can be found