3 research outputs found
Band Depopulation of Graphene Nanoribbons Induced by Chemical Gating with Amino Groups
Altres ajuts: Xunta de Galicia (ED431G/09); Gobierno Vasco (IT1246-19, IT-1255-19); Diputación Foral de Gipuzkoa (RED 2019-096); CERCA Program/Generalitat de Catalunya; Program Interreg V-A España-Francia-Andorra (194/16 TNI)The electronic properties of graphene nanoribbons (GNRs) can be precisely tuned by chemical doping. Here we demonstrate that amino (NH) functional groups attached at the edges of chiral GNRs (chGNRs) can efficiently gate the chGNRs and lead to the valence band (VB) depopulation on a metallic surface. The NH-doped chGNRs are grown by on-surface synthesis on Au(111) using functionalized bianthracene precursors. Scanning tunneling spectroscopy resolves that the NH groups significantly upshift the bands of chGNRs, causing the Fermi level crossing of the VB onset of chGNRs. Through density functional theory simulations we confirm that the hole-doping behavior is due to an upward shift of the bands induced by the edge NH groups
Band depopulation of graphene nanoribbons induced by chemical gating with amino groups
Trabajo presentado al CMD - GEFES (28th in the series of Condensed Matter General conferences), celebrado online del 31 de agosto al 4 de septiembre de 2020.Peer reviewe
Band Depopulation of Graphene Nanoribbons Induced by Chemical Gating with Amino Groups
Altres ajuts: Xunta de Galicia (ED431G/09); Gobierno Vasco (IT1246-19, IT-1255-19); Diputación Foral de Gipuzkoa (RED 2019-096); CERCA Program/Generalitat de Catalunya; Program Interreg V-A España-Francia-Andorra (194/16 TNI)The electronic properties of graphene nanoribbons (GNRs) can be precisely tuned by chemical doping. Here we demonstrate that amino (NH) functional groups attached at the edges of chiral GNRs (chGNRs) can efficiently gate the chGNRs and lead to the valence band (VB) depopulation on a metallic surface. The NH-doped chGNRs are grown by on-surface synthesis on Au(111) using functionalized bianthracene precursors. Scanning tunneling spectroscopy resolves that the NH groups significantly upshift the bands of chGNRs, causing the Fermi level crossing of the VB onset of chGNRs. Through density functional theory simulations we confirm that the hole-doping behavior is due to an upward shift of the bands induced by the edge NH groups