On the Usability of Probably Approximately Correct Implication Bases

We revisit the notion of probably approximately correct implication bases from the literature and present a first formulation in the language of formal concept analysis, with the goal to investigate whether such bases represent a suitable substitute for exact implication bases in practical use-cases. To this end, we quantitatively examine the behavior of probably approximately correct implication bases on artificial and real-world data sets and compare their precision and recall with respect to their corresponding exact implication bases. Using a small example, we also provide qualitative insight that implications from probably approximately correct bases can still represent meaningful knowledge from a given data set.Comment: 17 pages, 8 figures; typos added, corrected x-label on graph

SSRM characterisation of FIB induced damage in silicon

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 1012 cm-2 to 2·1016 cm-2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2·1013 cm-2 to 4·1014 cm-2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution

Lanthanoid Implantation for Effective Work Function Control in NMOS High‐κ∕Metal Gate Stacks

Effective work function instability of high‐κ∕metal gate MOS stacks after high temperature treatment results in device threshold voltage shifts and is one of the problems associated with the gate‐first integration of high‐κ dielectrics in the CMOS process flow. The exact reason for this instability is subject of intense debate. In this paper it is shown that a positive threshold voltage shift due to thermal treatment can be compensated by implanting the lanthanoids lanthanum or dysprosium into the high‐κ stack

Theory and Applications of X-ray Standing Waves in Real Crystals

Theoretical aspects of x-ray standing wave method for investigation of the real structure of crystals are considered in this review paper. Starting from the general approach of the secondary radiation yield from deformed crystals this theory is applied to different concreat cases. Various models of deformed crystals like: bicrystal model, multilayer model, crystals with extended deformation field are considered in detailes. Peculiarities of x-ray standing wave behavior in different scattering geometries (Bragg, Laue) are analysed in detailes. New possibilities to solve the phase problem with x-ray standing wave method are discussed in the review. General theoretical approaches are illustrated with a big number of experimental results.Comment: 101 pages, 43 figures, 3 table

Friction reduction and zero wear for 52100 bearing steel by high‐dose implantation of carbon

Ion implantation of carbon in the AISI 52100 bearing steel yields a distinct reduction in friction and wear. This improvement is strongly dependent on the implanted fluence. The coefficient of friction decreases from 0.6 to 0.2 for doses >1×1018 cm-2 (energy 100 keV) and a wear reduction to nearly ‘‘zero wear’’ was obtainable even under severe wear conditions. The counterpart (unimplanted AISI 52100 steel ball) shows a similar behavior, which demonstrates that the tribological system is totally changed. Mössbauer spectroscopy and x-ray diffraction revealed that hexagonal ¿-carbide is formed on implantation. On the other hand, Rutherford backscattering spectrometry shows that for high doses a large fraction of the implanted carbon is not contained in this carbide

The antibacterial activity of acetic acid against biofilm-producing pathogens of relevance to burns patients

Introduction: Localised infections, and burn wound sepsis are key concerns in the treatment of burns patients, and prevention of colonisation largely relies on biocides. Acetic acid has been shown to have good antibacterial activity against various planktonic organisms, however data is limited on efficacy, and few studies have been performed on biofilms. Objectives: We sought to investigate the antibacterial activity of acetic acid against important burn wound colonising organisms growing planktonically and as biofilms. Methods: Laboratory experiments were performed to test the ability of acetic acid to inhibit growth of pathogens, inhibit the formation of biofilms, and eradicate pre-formed biofilms. Results: Twenty-nine isolates of common wound-infecting pathogens were tested. Acetic acid was antibacterial against planktonic growth, with an minimum inhibitory concentration of 0.16-0.31% for all isolates, and was also able to prevent formation of biofilms (at 0.31 %). Eradication of mature biofilms was observed for all isolates after three hours of exposure. Conclusions: This study provides evidence that acetic acid can inhibit growth of key burn wound pathogens when used at very dilute concentrations. Owing to current concerns of the reducing efficacy of systemic antibiotics, this novel biocide application offers great promise as a cheap and effective measure to treat infections in burns patients

Microstructure and thermal stability of Fe, Ti and Ag implanted Yttria-stabilized zirconia

Yttria-stabilized zirconia (YSZ) was implanted with 15 keV Fe or Ti ions up to a dose of 8×1016 at cm−2. The resulting “dopant” concentrations exceeded the concentrations corresponding to the equilibrium solid solubility of Fe2O3 or TiO2 in YSZ. During oxidation in air at 400° C, the Fe and Ti concentration in the outermost surface layer increased even further until a surface layer was formed of mainly Fe2O3 and TiO2, as shown by XPS and ISS measurements. From the time dependence of the Fe and Ti depth profiles during anneal treatments, diffusion coefficients were calculated. From those values it was estimated that the maximum temperature at which the Fe- and Ti-implanted layers can be operated without changes in the dopant concentration profiles was 700 and 800° C, respectively. The high-dose implanted layer was completely amorphous even after annealing up to 1100° C, as shown by scanning transmission electron microscopy. Preliminary measurements on 50 keV Ag implanted YSZ indicate that in this case the amorphous layer recrystallizes into fine grained cubic YSZ at a temperature of about 1000° C. The average grain diameter was estimated at 20 nm, whereas the original grain size of YSZ before implantation was 400 nm. This result implies that the grain size in the surface of a ceramic material can be decreased by ion beam amorphisation and subsequent recrystallisation at elevated temperatures