58 research outputs found

    Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zincblende phase

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    Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by Transmission Electron Microscopy (TEM) related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire mappings, and RGB multilayered image reconstructions allows to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zincblende (zb) volumes, which acts as the intermediate phase between the initial InN-w and the most stable cubic In2O3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason of the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.Comment: 18 pages 7 figure

    Identity crisis in pulmonary arterial hypertension

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    International audiencePulmonary arterial hypertension (PAH) shares many hallmarks with cancer. Cancer cells acquire their hallmarks by a pathological Darwinian evolution process built on the so-called cancer cell ''identity crisis.'' Here we demonstrate that PAH shares the most striking features of the cancer identity crisis: the ectopic expression of normally silent tissue-specific genes

    Strain Relief Analysis of InN Quantum Dots Grown on GaN

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    We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system

    FFAT motif phosphorylation controls formation and lipid transfer function of inter‐organelle contacts

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    Organelles are physically connected in membrane contact sites. The endoplasmic reticulum possesses three major receptors, VAP‐A, VAP‐B, and MOSPD2, which interact with proteins at the surface of other organelles to build contacts. VAP‐A, VAP‐B, and MOSPD2 contain an MSP domain, which binds a motif named FFAT (two phenylalanines in an acidic tract). In this study, we identified a non‐conventional FFAT motif where a conserved acidic residue is replaced by a serine/threonine. We show that phosphorylation of this serine/threonine is critical for non‐conventional FFAT motifs (named Phospho‐FFAT) to be recognized by the MSP domain. Moreover, structural analyses of the MSP domain alone or in complex with conventional and Phospho‐FFAT peptides revealed new mechanisms of interaction. Based on these new insights, we produced a novel prediction algorithm, which expands the repertoire of candidate proteins with a Phospho‐FFAT that are able to create membrane contact sites. Using a prototypical tethering complex made by STARD3 and VAP, we showed that phosphorylation is instrumental for the formation of ER‐endosome contacts, and their sterol transfer function. This study reveals that phosphorylation acts as a general switch for inter‐organelle contacts

    Massless Dirac fermions in III-V semiconductor quantum wells

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    We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the Γ\Gamma point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity vF=1.8105v_F=1.8\cdot10^5 m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.Comment: Main text and Supplemental Materials, 14 pages, 9 figure

    Natural Nuclear Reactor Oklo and Variation of Fundamental Constants Part 1: Computation of Neutronics of Fresh Core

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    Using modern methods of reactor physics we have performed full-scale calculations of the natural reactor Oklo. For reliability we have used recent version of two Monte Carlo codes: Russian code MCU REA and world wide known code MCNP (USA). Both codes produce similar results. We have constructed a computer model of the reactor Oklo zone RZ2 which takes into account all details of design and composition. The calculations were performed for three fresh cores with different uranium contents. Multiplication factors, reactivities and neutron fluxes were calculated. We have estimated also the temperature and void effects for the fresh core. As would be expected, we have found for the fresh core a significant difference between reactor and Maxwell spectra, which was used before for averaging cross sections in the Oklo reactor. The averaged cross section of Sm-149 and its dependence on the shift of resonance position (due to variation of fundamental constants) are significantly different from previous results. Contrary to results of some previous papers we find no evidence for the change of the fine structure constant in the past and obtain new, most accurate limits on its variation with time: -4 10^{-17}year^{-1} < d alpha/dt/alpha < 3 10^{-17} year^{-1} A further improvement in the accuracy of the limits can be achieved by taking account of the core burnup. These calculations are in progress.Comment: 25 pages, 14 figures, 12 tables, minor corrections, typos correcte

    Main Cause of the Poloidal Plasma Motion Inside a Magnetic Cloud Inferred from Multiple-Spacecraft Observations

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    Although the dynamical evolution of magnetic clouds (MCs) has been one of the foci of interplanetary physics for decades, only few studies focus on the internal properties of large-scale MCs. Recent work by Wang et al. (J. Geophys. Res.120, 1543, 2015) suggested the existence of the poloidal plasma motion in MCs. However, the main cause of this motion is not clear. In order to find it, we identify and reconstruct the MC observed by the Solar Terrestrial Relations Observatory (STEREO)-A, Wind, and STEREO-B spacecraft during 19 – 20 November 2007 with the aid of the velocity-modified cylindrical force-free flux-rope model. We analyze the plasma velocity in the plane perpendicular to the MC axis. It is found that there was evident poloidal motion at Wind and STEREO-B, but this was not clear at STEREO-A, which suggests a local cause rather than a global cause for the poloidal plasma motion inside the MC. The rotational directions of the solar wind and MC plasma at the two sides of the MC boundary are found to be consistent, and the values of the rotational speeds of the solar wind and MC plasma at the three spacecraft show a rough correlation. All of these results illustrate that the interaction with ambient solar wind through viscosity might be one of the local causes of the poloidal motion. Additionally, we propose another possible local cause: the existence of a pressure gradient in the MC. The significant difference in the total pressure at the three spacecraft suggests that this speculation is perhaps correct

    Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

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    Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices

    High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

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    This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III–V semiconductor nanostructures and heterostructures
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