Can CP-violation be observed in heavy-ion collisions?

We demonstrate that, at least at present, there is no convincing way to detect CP-violation in heavy-ion collisions.Comment: 3 pages, 1 figure; reference added, misprint correcte

Upper limits on electric dipole moments of tau-lepton, heavy quarks, and W-boson

We discuss upper limits on the electric dipole moments (EDM) of the tau-lepton, heavy quarks, and W-boson, which follow from the precision measurements of the electron and neutron EDM.Comment: 8 pages, 7 figures; misprint corrected, results do not chang

Evolution of thick domain walls in inflationary and p=wρp=w\rho universe

We study the evolution of thick domain walls in the different models of cosmological inflation, in the matter-dominated and radiation-dominated universe, or more generally in the universe with the equation of state $p=w\rho$. We have found that the domain wall evolution crucially depends on the time-dependent parameter $C(t)=1/(H(t)\delta_0)^2$, where $H(t)$ is the Hubble parameter and $\delta_0$ is the thickness of the wall in flat space-time. For $C(t)>2$ the physical thickness of the wall, $a(t)\delta(t)$, tends with time to $\delta_0$, which is microscopically small. Otherwise, when $C(t) \leq 2$, the wall steadily expands and can grow up to a cosmologically large size.Comment: 15 pages, 9 figure

An ab-initio study of the electron-phonon coupling within a Cr(001)-surface

It is experimentally well established that the Cr(001)-surface exhibits a sharp resonance around the Fermi level. However, there is no consensus about its physical origin. It is proposed to be either due to a single particle dz2 surface state renormalised by electron-phonon coupling or the orbital Kondo effect involving the degenerate dxz/dyz states. In this work we examine the electron-phonon coupling of the Cr(001)-surface by means of ab-initio calculations in the form of density functional perturbation theory. More precisely, the electron-phonon mass-enhancement factor of the surface layer is investigated for the 3d states. For the majority and minority spin dz2 surface states we find values of 0.19 and 0.16. We show that these calculated electron-phonon mass-enhancement factors are not in agreement with the experimental data even if we use realistic values for the temperature range and surface Debye frequency for the fit of the experimental data. More precisely, then experimentally an electron-phonon mass-enhancement factor of 0.70~0.10 is obtained, which is not in agreement with our calculated values of 0.19 and 0.16. Therefore, we conclude that the experimentally observed resonance at the Cr(001)-surface is not due to polaronic effects, but due to electron-electron correlation effects

Excitonic Instability and Pseudogap Formation in Nodal Line Semimetal ZrSiS

Electron correlation effects are studied in ZrSiS using a combination of first-principles and model approaches. We show that basic electronic properties of ZrSiS can be described within a two-dimensional lattice model of two nested square lattices. High degree of electron-hole symmetry characteristic for ZrSiS is one of the key features of this model. Having determined model parameters from first-principles calculations, we then explicitly take electron-electron interactions into account and show that at moderately low temperatures ZrSiS exhibits excitonic instability, leading to the formation of a pseudogap in the electronic spectrum. The results can be understood in terms of Coulomb-interaction-assisted pairing of electrons and holes reminiscent to that of an excitonic insulator. Our finding allows us to provide a physical interpretation to the unusual mass enhancement of charge carriers in ZrSiS recently observed experimentally.Comment: 6 pages, 4 figures. Final versio

Adsorption of cobalt on graphene: Electron correlation effects from a quantum chemical perspective

In this work, we investigate the adsorption of a single cobalt atom (Co) on graphene by means of the complete active space self-consistent field approach, additionally corrected by the second-order perturbation theory. The local structure of graphene is modeled by a planar hydrocarbon cluster (C$_{24}$H$_{12}$). Systematic treatment of the electron correlations and the possibility to study excited states allow us to reproduce the potential energy curves for different electronic configurations of Co. We find that upon approaching the surface, the ground-state configuration of Co undergoes several transitions, giving rise to two stable states. The first corresponds to the physisorption of the adatom in the high-spin $3d^74s^2$ ($S=3/2$) configuration, while the second results from the chemical bonding formed by strong orbital hybridization, leading to the low-spin $3d^9$ ($S=1/2$) state. Due to the instability of the $3d^9$ configuration, the adsorption energy of Co is small in both cases and does not exceed 0.35 eV. We analyze the obtained results in terms of a simple model Hamiltonian that involves Coulomb repulsion ($U$) and exchange coupling ($J$) parameters for the 3$d$ shell of Co, which we estimate from first-principles calculations. We show that while the exchange interaction remains constant upon adsorption ($\simeq1.1$ eV), the Coulomb repulsion significantly reduces for decreasing distances (from 5.3 to 2.6$\pm$0.2 eV). The screening of $U$ favors higher occupations of the 3$d$ shell and thus is largely responsible for the interconfigurational transitions of Co. Finally, we discuss the limitations of the approaches that are based on density functional theory with respect to transition metal atoms on graphene, and we conclude that a proper account of the electron correlations is crucial for the description of adsorption in such systems.Comment: 12 pages, 6 figures, 2 table

Interfacial interactions between local defects in amorphous SiO2_2 and supported graphene

We present a density functional study of graphene adhesion on a realistic SiO$_2$ surface taking into account van der Waals (vdW) interactions. The SiO$_2$ substrate is modeled at the local scale by using two main types of surface defects, typical for amorphous silica: the oxygen dangling bond and three-coordinated silicon. The results show that the nature of adhesion between graphene and its substrate is qualitatively dependent on the surface defect type. In particular, the interaction between graphene and silicon-terminated SiO$_2$ originates exclusively from the vdW interaction, whereas the oxygen-terminated surface provides additional ionic contribution to the binding arising from interfacial charge transfer ($p$-type doping of graphene). Strong doping contrast for the different surface terminations provides a mechanism for the charge inhomogeneity of graphene on amorphous SiO$_2$ observed in experiments. We found that independent of the considered surface morphologies, the typical electronic structure of graphene in the vicinity of the Dirac point remains unaltered in contact with the SiO$_2$ substrate, which points to the absence of the covalent interactions between graphene and amorphous silica. The case of hydrogen-passivated SiO$_2$ surfaces is also examined. In this situation, the binding with graphene is practically independent of the type of surface defects and arises, as expected, from the vdW interactions. Finally, the interface distances obtained are shown to be in good agreement with recent experimental studies.Comment: 10 pages, 4 figure