Ballistic spin-transport properties of magnetic tunnel junctions with MnCr-based ferrimagnetic quaternary Heusler alloys

We investigate the suitability of nearly half-metallic ferrimagnetic quaternary Heusler alloys, CoCrMnZ (Z=Al, Ga, Si, Ge) to assess the feasibility as electrode materials of MgO-based magnetic tunnel junctions (MTJ). Low magnetic moments of these alloys originated from the anti-ferromagnetic coupling between Mn and Cr spins ensure a negligible stray field in spintronics devices as well as a lower switching current required to flip their spin direction. We confirmed mechanical stability of these materials from the evaluated values of elastic constants, and the absence of any imaginary frequency in their phonon dispersion curves. The influence of swapping disorders on the electronic structures and their relative stability are also discussed. A high spin polarization of the conduction electrons are observed in case of CoCrMnZ/MgO hetrojunctions, independent of terminations at the interface. Based on our ballistic transport calculations, a large coherent tunnelling of the majority-spin $s$-like $\Delta_1$ states can be expected through MgO-barrier. The calculated tunnelling magnetoresistance (TMR) ratios are in the order of 1000\%. A very high Curie temperatures specifically for CoCrMnAl and CoCrMnGa, which are comparable to $bcc$ Co, could also yield a weaker temperature dependece of TMR ratios for CoCrMnAl/MgO/CoCrMnAl (001) and CoCrMnGa/MgO/CoCrMnGa (001) MTJ.Comment: 24 pages, 13 figure

Electronic and magnetic properties of the topological semimetal SmMg2_2Bi2_2

Dirac semimetals show nontrivial physical properties and can host exotic quantum states like Weyl semimetals and topological insulators under suitable external conditions. Here, by combining angle-resolved photoemission spectroscopy measurements (ARPES) and first-principle calculations, we demonstrate that Zintl-phase compound SmMg$_2$Bi$_2$ belongs to the close proximity to a topological Dirac semimetallic state. ARPES results show a Dirac-like band crossing at the zone-center near the Fermi level ($E_\mathrm {F}$) which is further confirmed by first-principle calculations. Theoretical studies also reveal that SmMg$_2$Bi$_2$ belongs to a $Z_2$ topological class and hosts spin-polarized states around the $E_\mathrm {F}$. Zintl's theory predicts that the valence state of Sm in this material should be Sm$^{2+}$, however we detect many Sm-4$f$ multiplet states (flat-bands) whose energy positions suggest the presence of both Sm$^{2+}$ and Sm$^{3+}$. It is also evident that these flat-bands and other dispersive states are strongly hybridized when they cross each other. Due to the presence of Sm$^{3+}$ ions, the temperature dependence of magnetic susceptibility $\chi(T)$ shows Curie-Weiss-like contribution in the low temperature region, in addition to the Van Vleck-like behaviour expected for the Sm$^{2+}$ ions. The present study will help in better understanding of the electronic structure, magnetism and transport properties of related materials.Comment: 10 pages, 7 figure

Anisotropic magnetism and electronic structure of trigonal EuAl2_2Ge2_2 single crystals

The magnetic and electronic properties of the layered Zintl-phase compound EuAl$_2$Ge$_2$ crystallizing in the trigonal CaAl$_2$Si$_2$-type structure are reported. Our neutron-diffraction measurements show that EuAl$_2$Ge$_2$ undergoes A-type antiferromagnetic (AFM) ordering below $T_{\rm N} = 27.5(5)$~K, with the Eu moments (Eu$^{2+}$, $S = 7/2$) aligned ferromagnetically in the $ab$ plane. The $H = 0$ magnetic structure consists of trigonal AFM domains associated with $ab$-plane magnetic anisotropy and a field-induced reorientation of the Eu spins in the domains is evident at $T = 2$~K below the critical field $H_{c1} = 2.5(1)$ kOe. Electrical resistivity and ARPES measurements show that EuAl$_2$Ge$_2$ is metallic both above and below $T_{\rm N}$. In the AFM phase, we directly observe folded bands in ARPES due to the doubling of the magnetic unit cell along the $c$ axis with an enhancement of quasiparticle weight due to the complex change in the coupling between the magnetic moments and itinerant electrons on cooling below $T_{\rm N}$. The observed electronic structure is well reproduced by first-principle calculations, which also predict the presence of nontrivial electronic states near the Fermi level in the AFM phase with $Z_2$ topological numbers 1;(000).Comment: 16 pages, 13 captioned figures, 53 references Updated several affiliation

Experimental inspection of a computationally-designed NiCrMnSi Heusler alloy with high Curie temperature

Nowadays advanced magnetic tunnel junction applications demand very high tunnel magnetoresistance at room temperature, thus it is quite important to explore high Curie temperature Tc half-metallic Heusler alloys. In this article rst-principles calculation unveiled that NiCrMnSi has Tc of 1200 K comparable to that of the traditional Co2MnSi Heusler alloys, even though it does not contain Co element. In addition, we examined whether NiCrMnSi Heulser phase lms can be obtained by a magnetron sputtering on MgO substrates. The results of the structural analysis and rst-principles calculations indicated that NiCrMnSi Heusler phase is metastable. A possible route to obtain metastable NiCrMnSi Heusler alloy is to utilize appropriate templates

Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a B2-ordered phase. The saturation magnetization is 380 emu/cm3, almost the same as the value given by the Slater–Pauling–like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the Y -ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed