630-mV open circuit voltage, 12% efficient n-Si liquid junction

We report the first experimental observation of a semiconductor/liquid junction whose open circuit voltage Voc is controlled by bulk diffusion/recombination processes. Variation in temperature, minority-carrier diffusion length, and/or in majority-carrier concentration produces changes in the Voc of the n-Si/CH3OH interface in accord with bulk recombination/diffusion theory. Under AM2 irradiation conditions, the extrapolated intercept at 0 K of Voc vs T plots yields activation energies for the dominant recombination process of 1.1–1.2 eV, in accord with the 1.12-eV band gap of Si. A crucial factor in achieving optimum performance of the n-Si/CH3OH interface is assigned to photoelectrochemical oxide formation, which passivates surface recombination sites at the n-Si/CH3OH interface and minimizes deleterious effects of pinning of the Fermi level at the Si/CH3OH junction. Controlled Si oxide growth, combined with optimization of bulk crystal parameters in accord with diffusion theory, is found to yield improved photoelectrode output parameters, with 12.0±1.5% AM2 efficiencies and AM1 Voc values of 632–640 mV for 0.2-Ω cm Si materials

Fabrication of minority-carrier-limited n-Si/insulator/metal diodes

A photoelectrochemical anodization technique has been used to fabricate n-Si/insulator/metal (MIS) diodes with improved electrical properties. MIS structures fabricated with Au have provided the first experimental observation of a solid-state n-Si surface barrier device whose open circuit voltage Voc is controlled by minority-carrier bulk diffusion/recombination processes. For these diodes, variation of the minority-carrier diffusion length and majority-carrier dopant density produced changes in Voc that were in accord with bulk diffusion/recombination theory. Additionally, the variation in Voc in response to changes in the work function of the metal overlayer indicated that these MIS devices were not subject to the Fermi level pinning restrictions observed for n-Si Schottky structures. X-ray photoelectron spectroscopic characterization of the anodically grown insulator indicated 8.2±0.9 Å of a strained SiO2 layer as the interfacial insulator resulting from the photoanodization process

Characteristics of AlGaAs/GaAs multiple quantum well infrared detectors

Researchers fabricated and characterized several AlGaAs/GaAs multiple quantum well infrared detectors to evaluate the ultimate performance of these devices for low infrared background applications. The detectors were designed to have a single bound state in the quantum well and the first excited state in the continuum above the AlGaAs conduction band edge. The difference in energy between the two levels, as determined by the quantum well width and aluminum mole fraction in the barrier, was chosen such that peak absorption would occur near 8 microns. The initial structures studied comprised 50 periods with 40 A well widths and 300 A Al(0.28)Ga(0.72)As barriers. The performance of these detectors are summarized. To better interpret these results and design optimized detectors, researchers modeled both the detector noise and tunneling currents. The noise model correctly predicts that multiple quantum well detectors will, indeed, exhibit noise lower than full shot noise. The tunneling current model predicts the dark current versus bias for any choice of design parameters in a multiple quantum well detector. This model predicts a substantially reduced dark current (x 10(exp 04)) for samples with 400 A barriers. To evaluate structures with thicker barriers, researchers fabricated and characterized detectors with 400 A and 500 A barriers; a comparison of detector dark currents is shown. These results are consistent with the predictions of the dark current model

Low Modulus Biomimetic Microgel Particles with High Loading of Hemoglobin

We synthesized extremely deformable red blood cell-like microgel particles and loaded them with bovine hemoglobin (Hb) to potentiate oxygen transport. With similar shape and size as red blood cells (RBCs), the particles were fabricated using the PRINT(®) (Particle Replication In Non-wetting Templates) technique. Low crosslinking of the hydrogel resulted in very low mesh density for these particles, allowing passive diffusion of hemoglobin throughout the particles. Hb was secured in the particles through covalent conjugation of the lysine groups of Hb to carboxyl groups in the particles via EDC/NHS coupling. Confocal microscopy of particles bound to fluorescent dye-labeled Hb confirmed the uniform distribution of Hb throughout the particle interior, as opposed to the surface conjugation only. High loading ratios, up to 5 times the amount of Hb to polymer by weight, were obtained, without a significant effect on particle stability, shape, though particle diameter decreased slightly with Hb conjugation. Analysis of the protein by circular dichroism (CD) spectroscopy showed that the secondary structure of Hb was unperturbed by conjugation to the particles. Methemoglobin in the particles could be maintained at a low level and the loaded Hb could still bind oxygen as studied by UV-vis spectroscopy. Hb-loaded particles with moderate loading ratios demonstrated excellent deformability in microfluidic devices, easily deforming to pass through restricted pores half as wide as the diameter of the particles. The suspension of concentrated particles with Hb concentration of 5.2 g/dL showed comparable viscosity to that of mouse blood, and the particles remained intact even after being sheared at a constant high rate (1,000 1/s) for 10 min. Armed with the ability to control size, shape, deformability, and loading of Hb into RBC mimics, we will discuss the implications for artificial blood