Optical properties of multilayered porous silicon

International audienceWe present a short review of some optical devices based on multilayered porous silicon, which can be easily obtained by varying the formation current during the etching process. These include Bragg reflectors and Fabry–Pérot microcavities, which can be adjusted from the visible to the near infrared. The interface roughness, tragic in the case of multilayers, is studied. It can be drastically reduced when changing the electrolyte viscosity. The high reflectivities obtained in this way are measured by Cavity Ring–Down Spectroscopy. Problems occurring when realising thin layers and an efficient way to adjust precisely the optical thicknesses of the thin layers constituting the multilayered structure are also presented. Finally we present a method of calculation of the emission which takes absorption into account and is able to explain the angular dependence of the luminescence

Effect of growth conditions on optical properties of CdSe/ZnSe single quantum dots

In this work, we have investigated the optical properties of two samples of CdSe quantum dots by using submicro-photoluminescence spectroscopy. The effect of vicinal-surface GaAs substrates on their properties has been also assessed. The thinner sample, grown on a substrate with vicinal surface, includes only dots with a diameter of less than 10 nm (type A islands). Islands of an average diameter of about 16 nm (type B islands) that are related to a phase transition via a Stranski-Krastanow growth process are also distributed in the thicker sample grown on an oriented substrate. We have studied the evolution of lineshapes of PL spectra for these two samples by improving spatial resolution that was achieved using nanoapertures or mesa structures. It was found that the use of a substrate with the vicinal surface leads to the suppression of excitonic PL emitted from a wetting layer.Comment: 2pages, 2 figures, Proceedings of International Conference On Superlattices Nano-Structures And Nano-Devices, July, Toulouse, France, to appear in the special issue of Physica

Correlated Photon Emission from a Single II-VI Quantum Dot

We report correlation and cross-correlation measurements of photons emitted under continuous wave excitation by a single II-VI quantum dot (QD) grown by molecular-beam epitaxy. A standard technique of microphotoluminescence combined with an ultrafast photon correlation set-up allowed us to see an antibunching effect on photons emitted by excitons recombining in a single CdTe/ZnTe QD, as well as cross-correlation within the biexciton ($X_{2}$)-exciton ($X$) radiative cascade from the same dot. Fast microchannel plate photomultipliers and a time-correlated single photon module gave us an overall temporal resolution of 140 ps better than the typical exciton lifetime in II-VI QDs of about 250ps.Comment: 4 pages, 3 figures, to appear in Appl. Phys. Let

Optical Detection Of Paramagnetic Resonance In The Excited State Of F Centers In Cao

A detailed analysis of this double-resonance experiment shows that the emission takes place from the P3 excited level whose degeneracy is lifted by the Jahn-Teller coupling to Eg modes of vibration. An energy-level crossing effect is observed and its origin discussed. © 1972 The American Physical Society.28191268127

A Self Assembled Nanoelectronic Quantum Computer Based on the Rashba Effect in Quantum Dots

Quantum computers promise vastly enhanced computational power and an uncanny ability to solve classically intractable problems. However, few proposals exist for robust, solid state implementation of such computers where the quantum gates are sufficiently miniaturized to have nanometer-scale dimensions. Here I present a new approach whereby a complete computer with nanoscale gates might be self-assembled using chemical synthesis. Specifically, I demonstrate how to self-assemble the fundamental unit of this quantum computer - a 2-qubit universal quantum controlled-NOT gate - based on two exchange coupled multilayered quantum dots. Then I show how these gates can be wired using thiolated conjugated molecules as electrical connectors. A qubit is encoded in the ground state of a quantum dot spin-split by the Rashba interaction. Arbitrary qubit rotations are effected by bringing the spin splitting energy in a target quantum dot in resonance with a global ac magnetic field by applying a potential pulse of appropriate amplitude and duration to the dot. The controlled dynamics of the 2-qubit controlled-NOT operation (XOR) can be realized by exploiting the exchange coupling with the nearest neighboring dot. A complete prescription for initialization of the computer and data input/output operations is presented.Comment: 22 pages, 4 figure

Nano-engineered electron–hole exchange interaction controls exciton dynamics in core–shell semiconductor nanocrystals

A strong electron–hole exchange interaction (EI) in semiconductor nanocrystals (NCs) gives rise to a large (up to tens of meV) splitting between optically active ('bright') and optically passive ('dark') excitons. This dark–bright splitting has a significant effect on the optical properties of band-edge excitons and leads to a pronounced temperature and magnetic field dependence of radiative decay. Here we demonstrate a nanoengineering-based approach that provides control over EI while maintaining nearly constant emission energy. We show that the dark–bright splitting can be widely tuned by controlling the electron–hole spatial overlap in core–shell CdSe/CdS NCs with a variable shell width. In thick-shell samples, the EI energy reduces to <250 μeV, which yields a material that emits with a nearly constant rate over temperatures from 1.5 to 300 K and magnetic fields up to 7 T. The EI-manipulation strategies demonstrated here are general and can be applied to other nanostructures with variable electron–hole overlap

Optical losses in porous silicon waveguides in the near-infrared: Effects of scattering

International audienceBenefitting from the long path inside planar waveguides, we have investigated the optical losses of porous silicon, in the continuous 0.8–1.6 micrometer (0.77–1.55 eV) range. The obtained values, typically a few cm-1, are 1 order of magnitude larger than ‘‘pure’’ absorption losses measured previously.The other main sources of loss, including scattering on both interface roughness and nanocrystallites, are invoked. Calculations give the same order of magnitude as measurements. We also detected scattered light close to the direct beam

Photonic bandgap effect in periodic porous silicon planar waveguides

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Some New Aspects of Porous Silicon

We recall the geometry of porous silicon and the order of magnitude of some characteristic parameters. We give a brief review of optical experiments and their different interpretations. We focus on quantitative interpretations and show that an essential concept is confinement in a quantum wire or box. In particular, the exchange energy of electron-hole pairs correlated by Coulomb interaction inside a quantum box explains results obtained between 4 I{ and room temperature. Nevertheless, the large shift of the main luminescence line for similar porous silicon but different electrolytes cannot be explained by quantum confinement alone and has to be accounted for by the difference between the dielectric constants inside and outside the porous silicon. A brief account of electroluminescence experiments is also given