Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracte

Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm-1, while keeping the series resistance at values comparable cm with symmetrical quantum-well gradient index structures in the same material system. Uncoated devices show COD values of 35 mW/µm. If coated, this should scale to about 90 mW/µm. The threshold current density is about 1000 A/cm2 for 2-mm-long devices and a considerable part of it is probably due to recombination in the optical trap layer. Fundamental mode operation is limited to 120-180 mW for 6.5-µm-wide ridge waveguide uncoated devices and to 200-300 mW for 13.5-µm-wide ones, because of thermal waveguiding effects. These values are measured under pulsed conditions, 10 µs/l m

Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection

We present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs) stabilizes the polarization of the emitted light. Anisotropies in the gain and loss mechanisms introduced by asymmetric current injection are considered to explain this effect. The design scheme opens perspectives to obtain actual polarization control in VCSEL