Experimental test for elastic compliance during growth on glass-bonded compliant substrates

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Pulsed-N2 assisted growth of 5-20 nm thick β-W films

A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W

InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

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Fabrication of 5-20 nm thick β-W films

A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO2 and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO2 layer or in an oxygen controlled environment by flowing 2 sccm of O2 during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO2 substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device

Extraordinary Photoresponse in Two-Dimensional In₂Se₃ Nanosheets

We demonstrate extraordinary photoconductive behavior in two-dimensional (2D) crystalline indium selenide (In₂Se₃) nanosheets. Photocurrent measurements reveal that semiconducting In₂Se₃ nanosheets have an extremely high response to visible light, exhibiting a photoresponsivity of 3.95 × 10² A·W^–1 at 300 nm with an external quantum efficiency greater than 1.63 × 10⁵ % at 5 V bias. The key figures-of-merit exceed that of graphene and other 2D material-based photodetectors reported to date. In addition, the photodetector has a fast response time of 1.8 × 10^–2 s and a specific detectivity of 2.26 × 10¹² Jones. The photoconductive response of α-In₂Se₃ nanosheets extends into ultraviolet, visible, and near-infrared spectral regions. The high photocurrent response is attributed to the direct band gap (<i>E</i>_G = 1.3 eV) of In₂Se₃ combined with a large surface-area-to-volume ratio and a self-terminated/native-oxide-free surface, which help to reduce carrier recombination while keeping fast response, allowing for real-time detection under very low-light conditions