1.25 GHz – 3.3 GHz broadband solid state power amplifier for L and S bands applications

The research of a single stage broadband solid-state power amplifier based on ATF13876 transistor, which operates in the frequency ranging from 1.25 GHz ~3.3 GHz is presented in this paper. To achieve the broadband performance of the operating bandwidth, a multi-section quarter wave impedance transformer and an approximate transformation of previously synthesized lumped elements into transmission lines are adopted. With neatly design of broadband matching networks and biasing circuit, excellent matching performances and unconditionally stability are achieved over the whole operating bandwidth with a maximum gain of 17.2 dB. The large signal simulation shows that the proposed circuit reaches a saturated output power of 18.12 dBm with a maximum PAE of 27.55% and a 1-dB compression point at 5 dBm input power level. Considering the wide frequency coverage, the features of the proposed design compares favorably with the contemporary state-of-the-art

A trade-off design of microstrip broadband power amplifier for UHF applications

In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%

Design of L-S band broadband power amplifier using microstip lines

This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA

A GaAs Low Noise Amplifier for 2.4 GHz ISM band Applications

In this paper, a Low Noise Amplifier (LNA) operating in the Industrial Scientific and Medical (ISM) band of 2.45 GHz is proposed. The designed LNA is based on GaAs ATF21170 active device. To improve gain and matching parameters, a hybrid matching technique based on smith chart and optimization is used. The proposed biasing network as well as the stabilization circuit allow achieving a minimum noise figure with an unconditionally stability over the whole operating frequency ranging from 2.25 GHz to 2.55 GHz. Finally, some tradeoffs were done to obtain the minimum noise figure with the greatest available power gain. In terms of performances, the proposed structure shows an excellent noise figure of ~1Db.The simulated results show an excellent input/output return loss under -15 dB over the operation frequency band with an excellent small signal gain ranging between 17 dB and 15 dB. In terms of large signal performance, the proposed LNA achieves an output power of 17 dBm (52 mW) with a PAE of 22% and an output intercept IP3 around 27 dBm

Design of High-Power High-Efficiency Broadband GaN HEMT Power Amplifier for S Band Applications using Load-Pull Technique

This work reveals the design for broadband high-power high-efficiency GaN HEMT power amplifier, operating in the frequency band ranging from 2.15 GHz to 2.65 GHz. The proposed structure is implemented using Cree GaN HEMT CGH40010 transistor. The high-power and high-efficiency performances over the broadband bandwidth are achieved using the load-pull technique. The proposed power amplifier is unconditionally stable over the entire operating frequency band. With the neatly designed matching circuits, the introduced power amplifier shows an excellent input/output matching. The simulated results show a flat power gain of 15 dB with an output 1-dB compression point of 14 dB. In terms of largesignal performance, the proposed amplifier reaches a saturated output power of 41.3 dBm (~13.6 Watts) with a PAE of 64% and a drain efficiency of 72%. The proposed design achieves an excellent linearity with an output third order two-tone intercept point TOI of 48 dBm

GaAs FET Broadband Power Amplifier for L and S Bands Applications

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