Detection mechanism in highly sensitive ZnO nanowires network gas sensors

Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their response is still not fully understood, and mainly restricted to the linear response regime, which limits the design of appropriate sensors for specific applications. Here we analyse the non-linear response of a sensor based on ZnO nanowires network, both as a function of the device geometry and as a response to oxygen exposure. Using an appropriate model, we disentangle the contribution of the nanowire resistance and of the junctions between nanowires in the network. The applied model shows a very good consistency with the experimental data, allowing us to demonstrate that the response to oxygen at room temperature is dominated by the barrier potential at low bias voltage, and that the nanowire resistance starts to play a role at higher bias voltage. This analysis allows us to find the appropriate device geometry and working point in order to optimize the sensitivity. Such analysis is important for providing design rules, not only for sensing devices, but also for applications in electronics and opto-electronics using nanostructures networks with different materials and geometries

A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity and response time, but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high heigth to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterised their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, stablishing an advantage in total signal and linearity for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimisation of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.Comment: Article submitted to Nano Letter

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the spatial fluctuations of the electronic density, yielding space-dependent Franck-Condon factors. We discuss the consequent marked effects on transport which are compatible with recent measurements. This picture can be relevant for tunneling experiments in generic nano-electromechanical systems.Comment: 4+ pages, 3 figures (2 color, 1 BW

Persistent enhancement of the carrier density in electron irradiated InAs nanowires

We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to be caused by the increase of the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the nanowire electrical properties are predominantly affected by radiation-induced defects occuring at the nanowire surface and not in the bulk.Comment: 18 pages, 5 figure

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.This work was supported by the ANR through the Project No. ANR-11-JS04-002-01, and the Ministry of Higher Education and Research, Nord-Pas de Calais Regional Council and FEDER through the “Contrat de Projets Etat Region (CPER) 2007-2013.” P.C. is the recipient of an Australian Research Council Future Fellowship (project number FT120100498)

Single-hole transistor in p-type GaAs/AlGaAs heterostructures

A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed.Comment: 4 pages, 5 figure

PRAP-CVD: A Novel Technique to Deposit Intrinsically Conductive Polymers

Polymers provide extraordinary opportunities for functionalizing surfaces integrated into flexible devices contributing to a significant advancement in thin-film technologies. Both the advantageous characteristics of conventional polymers (e.g. low weight, flexibility) and the functional physical properties of conventional semiconductors (e.g. absorption and emission of light and a tuneable conductivity) can be found in polymers providing innovative materials. Among polymers with heterocyclic structures, called conjugated polymers, polythiophene remains one of the most intensely researched materials in the field of so called organic electronics owing to the relatively facile and well-established synthetic modifications of the corresponding monomers and its derivatives. In particular, poly(3,4-ethylenedioxythiophene) (PEDOT) is one of the most promising owing to its exceptional stability, transparency, and electrical conductivity. Nevertheless it is difficult to process PEDOT into thin-films by traditional solution-based methods. Plasma Radicals Assisted Polymerisation via Chemical Vapour Deposition (PRAP-CVD) is a novel technique able to overcome the challenges caused by the conventional techniques

Aharonov-Bohm oscillations in the presence of strong spin-orbit interactions

We have measured highly visible Aharonov-Bohm (AB) oscillations in a ring structure defined by local anodic oxidation on a p-type GaAs heterostructure with strong spin-orbit interactions. Clear beating patterns observed in the raw data can be interpreted in terms of a spin geometric phase. Besides h/e oscillations, we resolve the contributions from the second harmonic of AB oscillations and also find a beating in these h/2e oscillations. A resistance minimum at B=0T, present in all gate configurations, is the signature of destructive interference of the spins propagating along time-reversed paths.Comment: 4 pages, 3 figures, published versio

Magneto-transport Subbands Spectroscopy in InAs Nanowires

We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement.Comment: 13 Pages, 5 figure