Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool

For the commercialization of extreme ultraviolet lithography (EUVL), discharge or laser produced, pulsed plasma light sources are being considered. These sources are known to emit into a broad range of wavelengths that are collectively referred to as the out-of-band (OOB) radiation by lithographers. Multilayer EUV optics reflect OOB radiation emitted by the EUV sources onto the wafer plane resulting in unwanted background exposure of the resist (flare) and reduced image contrast. The reflectivity of multilayer optics at the target wavelength of 13.5 nm is comparable to that of their reflectivity in the deep ultraviolet (DUV) and UV regions from 100-350 nm. The aromatic molecular backbones of many of the resists used for EUV are equally absorptive at specific DUV wavelengths as well. In order to study the effect of these wavelengths on imaging performance in a real system, we are in the process of integrating a DUV source into the SEMATECH Berkeley 0.3-NA Microfield Exposure Tool (MET). The MET plays an active role in advanced research in resist and mask development for EUVL and as such, we will utilize this system to systematically evaluate the imaging impact of DUV wavelengths in a EUV system. In this paper, we present the optical design for the new DUV component and the simulation-based imaging results predicting the potential impact of OOB based on known resist, mask, and multilayer conditions. It should be noted that because the projection optics work equally well as imaging optics at DUV wavelengths, the OOB radiation cannot be treated simply as uniform background or DC flare

EUV mask reflectivity measurements with micro-scale spatial resolution

The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. They describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects

At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

At-wavelength interferometric characterization of a new 4x-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Set-2 optic. EUV characterization of the Set-2 optic is performed using the EUV phase-shifting point diffraction interferometer (PS/PDI) installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. This is the same interferometer previously used for the at-wavelength characterization and alignment of the ETS Set-1 optic. In addition to the PS/PDI-based full-field wavefront characterization, we also present wavefront measurements performed with lateral shearing interferometry, the chromatic dependence of the wavefront error, and the system-level pupil-dependent spectral-bandpass characteristics of the optic; the latter two properties are only measurable using at-wavelength interferometry

Ultra-high accuracy optical testing: creating diffraction-limitedshort-wavelength optical systems

Since 1993, research in the fabrication of extreme ultraviolet (EUV) optical imaging systems, conducted at Lawrence Berkeley National Laboratory (LBNL) and Lawrence Livermore National Laboratory (LLNL), has produced the highest resolution optical systems ever made. We have pioneered the development of ultra-high-accuracy optical testing and alignment methods, working at extreme ultraviolet wavelengths, and pushing wavefront-measuring interferometry into the 2-20-nm wavelength range (60-600 eV). These coherent measurement techniques, including lateral shearing interferometry and phase-shifting point-diffraction interferometry (PS/PDI) have achieved RMS wavefront measurement accuracies of 0.5-1-{angstrom} and better for primary aberration terms, enabling the creation of diffraction-limited EUV optics. The measurement accuracy is established using careful null-testing procedures, and has been verified repeatedly through high-resolution imaging. We believe these methods are broadly applicable to the advancement of short-wavelength optical systems including space telescopes, microscope objectives, projection lenses, synchrotron beamline optics, diffractive and holographic optics, and more. Measurements have been performed on a tunable undulator beamline at LBNL's Advanced Light Source (ALS), optimized for high coherent flux; although many of these techniques should be adaptable to alternative ultraviolet, EUV, and soft x-ray light sources. To date, we have measured nine prototype all-reflective EUV optical systems with NA values between 0.08 and 0.30 (f/6.25 to f/1.67). These projection-imaging lenses were created for the semiconductor industry's advanced research in EUV photolithography, a technology slated for introduction in 2009-13. This paper reviews the methods used and our program's accomplishments to date

Design and implementation of a vacuum compatible laser-based sub-nm resolution absolute distance measurement gauge

We describe the design and implementation of a vacuum compatible laser-based absolute distance measurement gauge with sub-nm resolution. The present system is compatible with operation in the 10{sup -8} Torr range and with some minor modifications could be used in the 10{sup -9} Torr range. The system is based on glancing incidence reflection and dual segmented diode detection. The system has been implemented as a focus sensor for extreme ultraviolet interferometry and microlithography experiments at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility and 1{sigma} operational measurement noise floor of 0.26 nm has been demonstrated

Design and implementation of a vacuum compatible laser-basedsub-nm resolution absolute distance measurement gauge

We describe the design and implementation of a vacuum compatible laser-based absolute distance measurement gauge with sub-nm resolution. The present system is compatible with operation in the 10{sup -8} Torr range and with some minor modifications could be used in the 10{sup -9} Torr range. The system is based on glancing incidence reflection and dual segmented diode detection. The system has been implemented as a focus sensor for extreme ultraviolet interferometry and microlithography experiments at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility and 1{sigma} operational measurement noise floor of 0.26 nm has been demonstrated

Assessing out-of-band flare effects at the wafer level for EUV lithography

To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement

HSQ double patterning process for 12 nm resolution x-ray zone plates

Soft x-ray zone plate microscopy is a powerful nano-analytic technique used for a wide variety of scientific and technological studies. Pushing its spatial resolution to 10 nm and below is highly desired and feasible due to the short wavelength of soft x-rays. Instruments using Fresnel zone plate lenses achieve a spatial resolution approximately equal to the smallest, outer most zone width. We developed a double patterning zone plate fabrication process based on a high-resolution resist, hydrogen silsesquioxane (HSQ), to bypass the limitations of conventional single exposure fabrication to pattern density, such as finite beam size, scattering in resist and modest intrinsic resist contrast. To fabricate HSQ structures with zone widths in the order of 10 nm on gold plating base, a surface conditioning process with (3-mercaptopropyl) trimethoxysilane, 3-MPT, is used, which forms a homogeneous hydroxylation surface on gold surface and provides good anchoring for the desired HSQ structures. Using the new HSQ double patterning process, coupled with an internally developed, sub-pixel alignment algorithm, we have successfully fabricated in-house gold zone plates of 12 nm outer zones. Promising results for 10 nm zone plates have also been obtained. With the 12 nm zone plates, we have achieved a resolution of 12 nm using the full-field soft x-ray microscope, XM-1

Real space soft x-ray imaging at 10 nm spatial resolution

Using Fresnel zone plates made with our robust nanofabrication processes, we have successfully achieved 10 nm spatial resolution with soft x-ray microscopy. The result, obtained with both a conventional full-field and scanning soft x-ray microscope, marks a significant step forward in extending the microscopy to truly nanoscale studies