X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium

We investigate AlGaAs/GaAs superlattices as well as InGaAs/GaAs quantum wells (QWs) and epitaxial quantum dots (QDs) where during the molecular beam epitaxy of InGaAs QDs the aluminium flux cell was opened briefly to incorporate fractional monolayers of Al into the InGaAs. We show that X-ray mapping with a large collection angle is capable to detect 0.3-0.4 fractional Al monolayers with a resolution of just under 1nm

Carrier and Light Trapping in Graded Quantum Well Laser Structures

We investigated the carrier and light trapping in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trapping in the quantum well, and that the trapping efficiency is enhanced by increasing the graded confining potential.Comment: PDF-format, 15 pages (including 4 figures), Applied Physics Letters (June 2000

Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures

We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry- and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geometry that are tailored during the growth process, which leads to emission in the application-relevant spectral range of 1.25-1.65 {\mu}m. By exploring the interplay of the very shallow hole confining potential and widely varying structural asymmetry, we show that a transition from the strong through intermediate to even weak confinement regime is possible in nanostructures of this kind. This has a significant impact on exciton recombination dynamics and the polarization of emission, which are shown to depend not only on details of the calculated excitonic states but also on excitation conditions in the photoluminescence experiments. We estimate the impact of the latter and propose a way to determine the intrinsic polarization-dependent exciton light-matter coupling based on kinetic characteristics.Comment: 11 pages, 8 figure

Spontaneously Localized Photonic Modes Due to Disorder in the Dielectric Constant

We present the first experimental evidence for the existence of strongly localized photonic modes due to random two dimensional fluctuations in the dielectric constant. In one direction, the modes are trapped by ordered Bragg reflecting mirrors of a planar, one wavelength long, microcavity. In the cavity plane, they are localized by disorder, which is due to randomness in the position, composition and sizes of quantum dots located in the anti-node of the cavity. We extend the theory of disorder induced strong localization of electron states to optical modes and obtain quantitative agreement with the main experimental observations.Comment: 6 page