Engineering analysis and design of a mechanism to simulate a sonic boom

Mechanism simulating vibrational and acoustic properties of sonic boom

Improved drive current in RF vertical MOSFETS using hydrogen anneal

This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800 ?C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors without the hydrogen anneal. The value of drive current achieved is 250 ?A/?m, which is a record for thick pillar vertical MOSFETs. This improved performance is obtained even though a sacrificial oxidation was performed prior to the hydrogen anneal to smooth the pillar sidewall. The values of subthreshold slope and DIBL are 79 mV/decade and 45 mV/V, respectively, which are significantly better than most values reported in the literature for comparable devices. The H2 anneal is also shown to decrease the OFF-state leakage current by a factor of three

A High-Resolution Atlas of Uranium-Neon in the H Band

We present a high-resolution (R ~ 50 000) atlas of a uranium-neon (U/Ne) hollow-cathode spectrum in the H-band (1454 nm to 1638 nm) for the calibration of near-infrared spectrographs. We obtained this U/Ne spectrum simultaneously with a laser-frequency comb spectrum, which we used to provide a first-order calibration to the U/Ne spectrum. We then calibrated the U/Ne spectrum using the recently-published uranium line list of Redman et al. (2011), which is derived from high-resolution Fourier transform spectrometer measurements. These two independent calibrations allowed us to easily identify emission lines in the hollow cathode lamp that do not correspond to known (classified) lines of either uranium or neon, and to compare the achievable precision of each source. Our frequency comb precision was limited by modal noise and detector effects, while the U/Ne precision was limited primarily by the signal-to-noise ratio (S/N) of the observed emission lines and our ability to model blended lines. The standard deviation in the dispersion solution residuals from the S/N-limited U/Ne hollow cathode lamp were 50% larger than the standard deviation of the dispersion solution residuals from the modal-noise-limited laser frequency comb. We advocate the use of U/Ne lamps for precision calibration of near-infrared spectrographs, and this H-band atlas makes these lamps significantly easier to use for wavelength calibration.Comment: 23 pages, 7 figures, submitted and accepted in ApJSS. Online-only material to be published online by ApJS

Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

We report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar

Maternal Circulating Levels of Activin A, Inhibin A, sFlt-1 and Endoglin at Parturition in Normal Pregnancy and Pre-Eclampsia

Background: Maternal circulating levels of anti-angiogenic factors such as soluble fms-like tyrosine kinase-1 (sFlt-1), endoglin (sEng) and placental proteins like activin A and inhibin A are increased before the onset of pre-eclampsia. There is evidence for oxidative stress in pre eclampsia. Recently it was shown that placental oxygen concentration is related to sFlt-1 and inhibin A. In addition it is reported that oxidative stress markers are increased in placental tissue delivered after labour. Therefore, the objective of this study is to investigate if these proteins are altered in maternal circulation of labouring preeclampsia and normal pregnancies. Methodology: To assess the effects of labour, samples were taken from 10 normal pregnant (NP) and 10 pre-eclamptic (PE) women pre-labour, full dilation, placental delivery and 24 h. To assess the effects of placental delivery, plasma samples were taken from 10NP and 10PE women undergoing elective Caesarean section, pre-delivery, placental delivery and 10 min, 60 min and 24 h post delivery. SFlt-1 and sEng and activin A and inhibin A were measured using commercial and in house ELISA’s respectively. Results: The levels of sFlt-1 and sEng were significantly higher in PE compared to NP women in both groups. In labour, sFlt- 1 levels increased significantly at full dilatation in PE women, before declining by 24 hr. However there was no significant rise in sEng levels in labour. Activin A and inhibin A levels declined rapidly with placental delivery in NP and PE pregnancies. There was a significant rise in activin A levels during labour in PE compared to pre labour, but inhibin levels did not increase. Conclusion: Labour in pre-eclamptic women increases the levels of sFlt-1 and activin A. This pilot data suggests that increase in the maternal levels of these factors in labour could predict and/or contribute to the maternal syndrome postpartum.Citation: Reddy, A. et al. (2009). 'Maternal circulating levels of activin A, inhibin A, sFlt-1 and endoglin at parturition in normal pregnancy and pre-eclampsia', PLoS ONE 4(2): e4453. [Available at http://www.plosone.org]. © 2009 Reddy et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited

Note and Comment

The Right of Joint Adventurers, Holding All the Stock of a corporation, to a Dissolution and Accounting in Equity; Liability of Water Companies for Losses by Fire in Actions of Tort; Judgments as contracts and the Effect of Motive in Creating a Tort; Intervening Agency as an Element in Determining Proximate Cause; Application of Michigan Statute for the Benefit of Laborers and Materialmen on Public Works and the Right of Third Parties to Sue; Marketable Title

A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation

In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs is presented. The model uses a single expression to model the channel current, thereby ensuring continuous transition between all operating regions. Furthermore, care has been taken to ensure that this expression is also infinitely differentiable, resulting in smooth and continuous conductances and capacitances as well as higher order derivatives. Floating-body effects, which are particular to PD SOI and which are of concern to analog circuit designers in this technology, are well modeled. Small geometry effects such as channel length modulation (CLM), drain-induced barrier lowering (DIBL), charge sharing, and high field mobility effects have also been included. Self-heating (SH) effects are much more apparent in SOI devices than in equivalent bulk devices. These have been modeled in a consistent manner, and the implementation in SPICE3f5 gives the user an additional thermal node which allows internal device temperature rises to be monitored and also accommodates the modeling of coupled heating between separate devices. The model has been successfully used to simulate a variety of circuits which commonly cause problems with convergence. Due to its inherent robustness, the model can normally achieve convergence without recourse to the setting of initial nodal voltage estimates

Measurement of refractive index by nanoparticle tracking analysis reveals heterogeneity in extracellular vesicles

Introduction: Optical techniques are routinely used to size and count extracellular vesicles (EV). For comparison of data from different methods and laboratories, suitable calibrators are essential. A suitable calibrator must have a refractive index (RI) as close to that of EV as possible but the RI of EV is currently unknown. To measure EV, RI requires accurate knowledge of size and light scattering. These are difficult to measure as most EVs cannot be resolved by light microscopy and their diameter is smaller than the wavelength of visible light. However, nanoparticle tracking analysis (NTA) provides both size and relative light scattering intensity (rLSI) values. We therefore sought to determine whether it was possible to use NTA to measure the RI of individual EVs. Methods: NTA was used to measure the rLSI and size of polystyrene and silica microspheres of known size and RI (1.470 and 1.633, respectively) and of EV isolated from a wide range of cells. We developed software, based on Mie scattering code, to calculate particle RI from the rLSI data. This modelled theoretical scattering intensities for polystyrene and silica microspheres of known size (100 and 200 nm) and RI. The model was verified using data from the polystyrene and silica microspheres. Size and rLSI data for each vesicle were processed by the software to generate RI values. Results: The following modal RI measurements were obtained: fresh urinary EV 1.374, lyophilised urinary EV 1.367, neuroblastoma EV 1.393, blood EV 1.398, EV from activated platelets 1.390, small placental EV 1.364–1.375 and 1.398–1.414 for large placental EV (>200 nm). Large placental EV had a significantly higher RI than small placental EV (p<0.0001). The spread of RI values was narrower for small EV than for the more heterogeneous large EV. Discussion: Using NTA and Mie scattering theory, we have demonstrated that it is possible to estimate the RI of sub-micron EV using NTA data. EV typically had a modal RI of 1.37–1.39, whereas values of >1.40 were observed for some large (>200 nm) microvesicles. Conclusion: This method for measuring EV RI will be useful for developing appropriate calibrators for EV measurement

Timing of Sleep and Its Relationship with the Endogenous Melatonin Rhythm

While much research has investigated the effects of exogenous melatonin on sleep, less is known about the relationship between the timing of the endogenous melatonin rhythm and the sleep–wake cycle. Significant inter-individual variability in the phase relationship between sleep and melatonin rhythms has been reported although the extent to which the variability reflects intrinsic and/or environmental differences is unknown. We examined the effects of different sleeping schedules on the time of dim light melatonin onset (DLMO) in 28 young, healthy adults. Participants chose to maintain either an early (22:30–06:30 h) or a late (00:30–08:30 h) sleep schedule for at least 3 weeks prior to an overnight laboratory visit. Saliva samples were collected under dim light (<2 lux) and controlled posture conditions to determine salivary DLMO. The 2-h difference between groups in the enforced sleep–wake schedule was associated with a concomitant 1.75-h delay in DLMO. The mean phase relationship between sleep onset and DLMO remained constant (~2 h). The variance in DLMO time, however, was greater in the late group (range 4.5 h) compared to the early group (range 2.4 h) perhaps due to greater effect of environmental influences in delayed sleep types or greater intrinsic instability in their circadian system. The findings contribute to our understanding of individual differences in the human circadian clock and have important implications for the diagnosis and treatment of circadian rhythm sleep disorders, in particular if a greater normative range for phase angle of entrainment occurs in individuals with later sleep–wake schedules