Greenhouse gas emissions mitigation in more sustainable agroecosystems in Cerrado.

In this work, we show that the transition to more sustainable rural production can mitigate greenhouse gas (GHG) emissions by agroecosystems without compromising revenues, particularly in the Cerrado region.(Embrapa Gado de Corte. Documentos, 216). Coordenador Roberto Giolo de Almeida. II SIGEE. Disponível em: . Acesso em: 30 nov. 2016

Gaseous fluxes in oxisol soil surfaces at integrated plant-livestock systems.

The experiment consisted of additionally applying swine effluent of biodigester as an organic fertilizer with known doses (measured, not shown) in sites with arrangements of forestry mixed with agriculture (soya/corn rotation).(Embrapa Gado de Corte. Documentos, 216). Coordenador Roberto Giolo de Almeida. II SIGEE. Disponível em: . Acesso em: 30 nov. 2016

Determination of the complex refractive index and optical bandgap of CH3NH3PbI3 thin films

We report the complex refractive index of methylammonium lead iodide CH3NH3PbI3 perovskite thin films obtained by means of variable angle spectroscopic ellipsometry and transmittance reflectance spectrophotometry in the wavelength range of 190 amp; 8201;nm to 2500 amp; 8201;nm. The film thickness and roughness layer thickness are determined by minimizing a global unbiased estimator in the region where the spectrophotometry and ellipsometry spectra overlap. We then determine the optical bandgap and Urbach energy from the absorption coefficient, by means of a fundamental absorption model based on band fluctuations in direct emiconductors. This model merges both the Urbach tail and the absorption edge regions in a single equation. In this way, we increase the fitting region and extend the conventional amp; 945; amp; 8463; amp; 969; 2 plot method to obtain accurate bandgap value

Optimization of PECVD process for ultra thin tunnel SiOx film as passivation layer for silicon heterojunction solar cells

Ultra thin silicon oxide a SiOx H films have been grown by means of plasma enhanced chemical vapor deposition PECVD to replace the standard hydrogenated amorphous silicon a Si H passivation layer for silicon heterojunction solar cells to reduce parasitic absorption. Additionally, silicon oxide surfaces are well known as superior substrates for the nucleation enhancement for nanocrystalline silicon doped films. Symmetrical passivation samples were fabricated with variable a SiOx H layers with a thickness of 10 1.5 nm and characterized after several annealing steps 25 650 C . The best value reached so far on lt;100 gt; oriented Si wafers is implied open circuit voltage of 686 mV and minority carrier lifetime of 1.6 ms after annealing at 300 C. Such values were found to be reproducible even for ultra thin a SiOx H layers 1.5 n

Molecular detection of avian gyrovirus type 2 (AGV2) in specific pathogen free (SPF) chickens housed on commercial broiler litter.

Projeto/Plano de Ação: 02.11.01.012

Recombinant biosynthesis of functional human growth hormone and coagulation factor IX in transgenic soybean seeds.

Edição do Congress of the Brazilian Biotechnology Society, Florianópolis, 2013

Aluminium metallisation for interdigitated back contact silicon heterojunction solar cells

Back contact silicon heterojunction solar cells with an efficiency of 22 were manufactured, featuring a simple aluminium metallisation directly on the doped amorphous silicon films. Both the open circuit voltage and the fill factor heavily depend on the parameters of the annealing step after aluminium layer deposition. Using numerical device simulations and in accordance with the literature, we demonstrate that the changes in solar cell parameters with annealing can be explained by the formation of an aluminium silicide layer at temperatures as low as 150 C, improving the contact resistance and thus enhancing the fill factor. Further annealing at higher temperatures initialises the crystallisation of the amorphous silicon layers, yielding even lower contact resistances, but also introduces more defects, diminishing the open circuit voltag