167 research outputs found

    Primary pure non-gestational choriocarcinoma of ovary: a rare case report

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    Germ cell malignancies represent 15% of ovarian cancers. Choriocarcinoma is a malignant tumour with trophoblastic differentiation. It may be gestational or non-gestational and may be a primary tumour or metastatic from other organs. Pure non-gestational choriocarcinoma is an extremely rare neoplasm, with reports of only a few cases. This study reports a rare case of non-gestational pure choriocarcinoma in a postmenarcheal young female and describes details of the tumour, including the clinicopathological findings. A young female presented with sudden onset anxiety, abdominal distention, severe abdominal pain, and severe pallor. Clinically, she was diagnosed as a case of ruptured ectopic pregnancy, and was taken up for emergency laparotomy. A right ovarian mass of 5X7 cm was seen, which was ruptured and was bleeding profusely. Right salpingo-oophorectomy was done, and it was diagnosed histopathologically as primary pure non-gestational choriocarcinoma of ovary. This case report describes the histopathological and immunohistochemical findings of this rare entity, as well as the various methods to differentiate between cases of non-gestational and gestational choriocarcinoma of the ovary. This is important as non-gestational choriocarcinoma has a poorer prognosis in comparison with gestational. Also, the treatment regimen for the two differs

    Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques

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    In the present paper SiN thin film has been studied as a passivation layer and its effect on AlGaN/GaN HEMTs is investigated using two different deposition techniques i.e PECVD and ICPCVD. AlGaN/GaN HEMTs devices passivated with optimised SiN film have delivered lower gate leakage current (from μA to nA). Device source drain saturation current (Ids) increased from 400mA/mm to ~550 A/mm and the peak extrinsic trans-conductance increased from 100 mS/mm to 170 mS/mm for a 0.8 μm HEMT device. The optimised SiN passivation process has resulted in reduced current collapse and increased breakdown voltage for HEMT devices.

    Synchronous mucinous cystadenoma ovary, leiomyoma uterus and mucinous adenocarcinoma cervix infiltrating into uterine leiomyoma: a rare case report

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    The overall incidence of synchronous female genital tract malignancies is 0.63%. The most frequently observed synchronous neoplasms are those of the ovary together with the endometrium. Cervical and ovarian malignancies are exceedingly rare. We present the case of a female patient who complained of abdominal distention and pain abdomen. A cervical pap smear was performed, and it showed inflammation and atrophic changes. USG abdomen revealed findings consistent with pyometra. Repeated dilatation and curretage for resolving the pyometra was attempted, but it yielded mucinous fluid only. Another USG abdomen was done, which showed a cervical growth. The patient was taken up for staging laparotomy. Per operatively, no growth could be identified in the cervix. However, dense adhesions of the cervix with the bladder were present. A bilateral salpingo-oophorectomy specimen was sent for intraoperative cytology, and showed mucinous cystadenoma, ovary. Further, the completion total hysterectomy specimen was sent for histopathology. Sections showed adenocarcinoma, cervix and leiomyoma, uterus. The cervical adenocarcinoma showed infiltration into the uterine leiomyoma. Thus, we document a very rare case involving a patient who presented with three coexistent tumours involving bilateral ovaries and uterus. To our knowledge, this is the first reported case of the combination. Accurate diagnosis as separate independent primary tumours or as primary tumour associated with its metastasis, and identification the site of origin in secondary tumours has important prognostic implications and is necessary for appropriate staging and treatment

    Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications

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    An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using analytical equations. RF performance of the device was also studied and device parameters were extracted following small signal equivalent circuit model. Extensive simulations in Silvaco TCAD were also carried out by varying stem height, gate length and incorporating back barrier to optimize the suitability of this device in Ku-band by reducing the detrimental Short Channel Effects (SCEs). In this paper a novel structure i.e., a short length T gate with recess, on thin GaN buffer to achieve high cut-off frequency (fT_T) and high maximum oscillating frequency (fmax_{max}) apt for Ku-band applications is also proposed

    Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage

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    The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher VDS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices
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