DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

Commercial npn transistor (2N 2219A) irradiated with 50 MeV Li3+-ions with fluences ranging from 3.1 × 1013 ions cm−2 to 12.5 × 1013 ions cm−2, is studied for radiation induced gain degradation and minority carrier trap levels or recombination centers. The properties such as activation energy, trap concentration and capture cross section of induced deep levels are studied by deep level transient spectroscopy (DLTS) technique. Minority carrier trap levels with energies ranging from 0.237 eV to 0.591 eV were observed in the base–collector junction of the transistor. In situ I–V measurements were made to study the gain degradation as a function of ion fluence. Ion induced energy levels result in increase in the base current through Shockley Read Hall (SRH) or multi-phonon recombination and subsequent transistor gain degradation

Investigation of deep level defects in copper irradiated bipolar junction transistor

Commercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu11+-ions with fluence of the order 1012 ions cm-2, is studied for radiation induced gain degradation and deep level defects. I-V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from EC - 0.164 eV to EC - 0.695 eV are observed in the base-collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.203 eV to EV + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation. © 2008 Elsevier Ltd. All rights reserved

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Analysis of generation and annihilation of deep level defects in a silicon-irradiated bipolar junction transistor

A commercial bipolar junction transistor (2 N 2219 A, npn), irradiated with 120 MeV Si9+ ions with a fluence of the order of 1012 ions cm-2, is studied for radiation-induced gain degradation and deep level defects. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap energy levels with energies ranging from EC - 0.160 eV to EC - 0.581 eV are observed in the base-collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.182 eV to EV + 0.401 eV. The identification of the defect type is made on the basis of its finger prints such as activation energy, annealing temperature and capture cross section by comparing with those reported in the literature. New energy levels for the defects A-center, di-vacancy and Si-interstitial are also observed. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation. © 2007 IOP Publishing Ltd

I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

A commercial bipolar junction transistor (2N 2219A, npn) irradiated with 84 MeV O6+-ions with fluence of the order of 1013 ions cm-2 is studied for radiation-induced gain degradation and deep-level defects or recombination centers. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep-level transient spectroscopy. Minority carrier trap energy levels with energies ranging from EC -0.17 eV to EC-0.55 eV are observed in the base-collector junction of the transistor. Majority carrier defect levels are also observed with energies ranging from EV+0.26eV to EV +0.44eV. The irradiated device is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250°C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for an increase in base current through Shockley-Read-Hall or multi-phonon recombination and consequent transistor gain degradation

Incineration of diesel particulate matter using induction heating technique

Incineration of diesel particulate matter for the regeneration of a mesh-type particulate-filter is achieved using induction heating technique. Heating of the diesel particulates deposited on the mesh-type particulate-filter at around 600 °C is investigated. In the case of the particulate filter, stainless-steel mesh-type filters are considered and the influence on filtering efficiency, the engine performance due to back-pressure generation is studied. Theoretical estimation shows that induction heating approach for the regeneration via exhaust gas heating requires high power (>3 kW). On the other hand, regeneration of mesh-type particulate-filter using induction heating technique requires a low input power of around 0.5 kW in the off-line condition. The proposed mesh-type particulate-filter allowed a filtration efficiency of around 30-40% at lower engine speeds and part loads. Particulate combustion through induction heating at static condition is studied and power required for mesh-type filter and sintered metal filter regeneration during engine operation is estimated theoretically.Mesh-type particulate-filter Filter regeneration Particulate matter Induction heating Diesel particulate incineration Exhaust back pressure

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Not AvailableBench mark soils have been identified in National Agricultural Research Project (NARP) zones of Andhra Pradesh based on extent of distribution using soil resource mapping information. Soils of most of agricultural stations of SAU/ICAR Institutes were studied and characterized. Long–term weekly rainfall data available for different locations from Indian Meteorological Department (IMD) and agricultural research stations were collected and analyzed for length of growing period for different locations of NARP zones for crop planning. Soil and agro-environments of research stations were compared with adjoining geographical areas of NARP zones to see soil homogeneity and transferability of agro-technology in farmer fields. Length of crop growing period in each NARP zone is found highly variable which suggest the need for site specific varietal recommendation instead of currently followed recommendations. Similarly single fertilizer recommendation is being advocated for larger area but it needs more than one fertilizer recommendation based on bench mark soils in the state. Acharya N.G. Ranga Agricultural University (ANGRAU) has to refine or revalidate their agro-technologies considering crop growing period and soil variability.Not Availabl