Singlet oxygen stimulates mitochondrial bioenergetics in brain cells.

Oxygen, in form of reactive oxygen species (ROS), has been shown to participate in oxidative stress, one of the major triggers for pathology, but also is a main contributor to physiological processes. Recently, it was found that 1267 nm irradiation can produce singlet oxygen without photosensitizers. We used this phenomenon to study the effect of laser-generated singlet oxygen on one of the major oxygen-dependent processes, mitochondrial energy metabolism. We have found that laser-induced generation of 1O2 in neurons and astrocytes led to the increase of mitochondrial membrane potential, activation of NADH- and FADH-dependent respiration, and importantly, increased the rate of maximal respiration in isolated mitochondria. The activation of mitochondrial respiration stimulated production of ATP in these cells. Thus, we found that the singlet oxygen generated by 1267 nm laser pulse works as an activator of mitochondrial respiration and ATP production in the brain

Diode-pumped ultrafast Yb:KGW laser with 56 fs pulses and multi-100 kW peak power based on SESAM and Kerr-lens mode locking

A high-power sub-60 fs mode-locked diode-pumped Yb:KGW laser based on hybrid action of an InGaAs quantum-dot saturable absorber mirror and Kerr-lens mode locking was demonstrated. The laser delivered 56 fs pulses with 1.95 W of average power corresponding to 450 kW of peak power. The width of the generated laser spectrum was 20.5 nm, which was near the gain bandwidth limit of the Yb:KGW crystal. To the best of our knowledge, these are the shortest pulses generated from the monoclinic double tungstate crystals (and Yb:KGW laser crystal in particular) and the most powerful in the sub-60 fs regime. At the same time, they are also the shortest pulses produced to date with the help of a quantum-dot-based saturable absorber. High-power operation with a pulse duration of 90 fs and 2.85 W of average output power was also demonstrated

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

High pulse repetition rate (≥10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices

Observation of soliton pulse compression in photonic crystal waveguides

We demonstrate soliton-effect pulse compression in mm-long photonic crystal waveguides resulting from strong anomalous dispersion and self-phase modulation. Compression from 3ps to 580fs, at low pulse energies(~10pJ), is measured via autocorrelation

Coherent master equation for laser modelocking

Modelocked lasers constitute the fundamental source of optically-coherent ultrashort-pulsed radiation, with huge impact in science and technology. Their modeling largely rests on the master equation (ME) approach introduced in 1975 by Hermann A. Haus. However, that description fails when the medium dynamics is fast and, ultimately, when light-matter quantum coherence is relevant. Here we set a rigorous and general ME framework, the coherent ME (CME), that overcomes both limitations. The CME predicts strong deviations from Haus ME, which we substantiate through an amplitude-modulated semiconductor laser experiment. Accounting for coherent effects, like the Risken-Nummedal-Graham-Haken multimode instability, we envisage the usefulness of the CME for describing self-modelocking and spontaneous frequency comb formation in quantum-cascade and quantum-dot lasers. Furthermore, the CME paves the way for exploiting the rich phenomenology of coherent effects in laser design, which has been hampered so far by the lack of a coherent ME formalism

Broad area DBR laser diodes with self-focussed output beam

We report the first realisation of novel DBR lasers incorporating confocal gratings. The devices exhibited single-longitudinal mode operation with a laterally focussed beam and will be suitable for applications requiring both spectrally and spatially enhanced beam quality

Self-focused distributed Bragg reflector laser diodes

We report a theoretical and experimental investigation of a special type of tapered distributed Bragg reflector laser diode incorporating confocal gratings. The devices exhibit single-longitudinal mode operation with a laterally focused beam and will be suitable for applications requiring both spectrally and spatially enhanced beam quality. (C) 2004 American Institute of Physics.</p

Second-harmonic generation from a first-order quasi-phase-matched GaAs/AlGaAs waveguide crystal

We demonstrate, for the first time to our knowledge, the generation of second-harmonic pulses by use of a novel methodology for achieving first-order quasi-phase matching in a semiconductor waveguide crystal. This methodology is based on a periodic modulation of the susceptibility coefficient along the direction of light-beam propagation in which advantage is taken of the fact that chi ((2))(GaAs) &gt; chi ((2))(AlxGa1-xAs). Efficient second-harmonic generation at 975 mn of a pump wavelength of 1950 nm has been demonstrated for a crystal with a nonuniform domain dimension (duty cycle, similar to 39/61). (C) 2001 Optical Society of America.</p

Mode-locked quantum-dot lasers

Semiconductor lasers are convenient and compact sources of light, offering highly efficient operation, direct electrical control and integration opportunities. In this review we describe how semiconductor quantum-dot structures can provide an efficient means of amplifying and generating ultrafast (of the order of 100 fs), high-power and low-noise optical pulses, with the potential to boost the repetition rate of the pulses to beyond 1 THz. Such device designs are opening up new possibilities in ultrafast science and technology.</p