1,942 research outputs found
(Quantumness in the context of) Resource Theories
We review the basic idea behind resource theories, where we quantify quantum
resources by specifying a restricted class of operations. This divides the
state space into various sets, including states which are free (because they
can be created under the class of operations), and those which are a resource
(because they cannot be). One can quantify the worth of the resource by the
relative entropy distance to the set of free states, and under certain
conditions, this is a unique measure which quantifies the rate of state to
state transitions. The framework includes entanglement, asymmetry and purity
theory. It also includes thermodynamics, which is a hybrid resource theory
combining purity theory and asymmetry. Another hybrid resource theory which
merges purity theory and entanglement can be used to study quantumness of
correlations and discord, and we present quantumness in this more general
framework of resource theories.Comment: review articl
Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits
This work is concerned with Al/Al-oxide(AlO)/Al-layer systems which are
important for Josephson-junction-based superconducting devices such as quantum
bits. The device performance is limited by noise, which has been to a large
degree assigned to the presence and properties of two-level tunneling systems
in the amorphous AlO tunnel barrier. The study is focused on the
correlation of the fabrication conditions, nanostructural and nanochemical
properties and the occurrence of two-level tunneling systems with particular
emphasis on the AlO-layer. Electron-beam evaporation with two different
processes and sputter deposition were used for structure fabrication, and the
effect of illumination by ultraviolet light during Al-oxide formation is
elucidated. Characterization was performed by analytical transmission electron
microscopy and low-temperature dielectric measurements. We show that the
fabrication conditions have a strong impact on the nanostructural and
nanochemical properties of the layer systems and the properties of two-level
tunneling systems. Based on the understanding of the observed structural
characteristics, routes are derived towards the fabrication of
Al/AlO/Al-layers systems with improved properties.Comment: 28 pages, 4 figure
Antiferromagnetic phase of the gapless semiconductor V3Al
Discovering new antiferromagnetic compounds is at the forefront of developing
future spintronic devices without fringing magnetic fields. The
antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully
synthesized via arc-melting and annealing. The antiferromagnetic properties
were established through synchrotron measurements of the atom-specific magnetic
moments, where the magnetic dichroism reveals large and oppositely-oriented
moments on individual V atoms. Density functional theory calculations confirmed
the stability of a type G antiferromagnetism involving only two-third of the V
atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray
diffraction and transport measurements also support the antiferromagnetism.
This archetypal gapless semiconductor may be considered as a cornerstone for
future spintronic devices containing antiferromagnetic elements.Comment: Accepted to Physics Review B on 02/23/1
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