(Quantumness in the context of) Resource Theories

We review the basic idea behind resource theories, where we quantify quantum resources by specifying a restricted class of operations. This divides the state space into various sets, including states which are free (because they can be created under the class of operations), and those which are a resource (because they cannot be). One can quantify the worth of the resource by the relative entropy distance to the set of free states, and under certain conditions, this is a unique measure which quantifies the rate of state to state transitions. The framework includes entanglement, asymmetry and purity theory. It also includes thermodynamics, which is a hybrid resource theory combining purity theory and asymmetry. Another hybrid resource theory which merges purity theory and entanglement can be used to study quantumness of correlations and discord, and we present quantumness in this more general framework of resource theories.Comment: review articl

Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits

This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlO$_{x}$ tunnel barrier. The study is focused on the correlation of the fabrication conditions, nanostructural and nanochemical properties and the occurrence of two-level tunneling systems with particular emphasis on the AlO$_{x}$-layer. Electron-beam evaporation with two different processes and sputter deposition were used for structure fabrication, and the effect of illumination by ultraviolet light during Al-oxide formation is elucidated. Characterization was performed by analytical transmission electron microscopy and low-temperature dielectric measurements. We show that the fabrication conditions have a strong impact on the nanostructural and nanochemical properties of the layer systems and the properties of two-level tunneling systems. Based on the understanding of the observed structural characteristics, routes are derived towards the fabrication of Al/AlO$_{x}$/Al-layers systems with improved properties.Comment: 28 pages, 4 figure

Antiferromagnetic phase of the gapless semiconductor V3Al

Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic gapless semiconducting D03 phase of V3Al was successfully synthesized via arc-melting and annealing. The antiferromagnetic properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely-oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-third of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing antiferromagnetic elements.Comment: Accepted to Physics Review B on 02/23/1