Dissolution rates of uranium dioxide sintered pellets in nitric acid systems

"October 16, 1963.""Reprinted from Journal of Applied Chemistry Published by the Society of Chemical Industry Volume 13, No. I, January 1963, Pages 32-40.

Interface state contribution to the photovoltaic effect in organic phototransistors:Photocapacitance measurements and optical sensing

Made available in DSpace on 2018-12-11T16:50:21Z (GMT). No. of bitstreams: 0 Previous issue date: 2018-01-01Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Instituto Nacional de Ciência e Tecnologia em Eletrônica OrgânicaWe report the results of an investigation into the contribution that trapping in interface states makes to the photovoltaic effect observed in organic phototransistors. To isolate this effect from other processes that occur in the transistor structure when under illumination, we focus attention on the photo-response of metal-insulator-semiconductor (MIS) capacitors - the core structure of transistors. The capacitors comprised poly(3-hexylthiophene), (P3HT), as the active semiconductor in combination with one of three insulators, namely, poly(amide-imide), (PAI), SU-8 photoresist and polysilsesquioxane (PSQ). Following initial characterization in the dark, the capacitor response was measured both during and after irradiation with light in the wavelength range 400–700 nm. Three different approaches were employed to study the photo-response, each providing a different insight into the processes occurring. Capacitance-voltage sweeps before, during and after illumination provided direct evidence supporting the view that the photovoltaic effect occurred as a result of electron trapping in interface states of density up to ∼2 × 1012 cm−2 in the P3HT/PAI combination but lower for SU-8 and PSQ. The dynamic photo-response, in which device capacitance was held constant by changing the applied bias, showed a fast component related to optically induced photoconduction in the semiconductor and a slower component reflecting the dynamics of interface electron trapping. Finally, photo-induced capacitance changes occurring with constant applied voltage were used to demonstrate a simple 3 × 3 imaging array.School of Electronic Engineering Bangor University, Dean StreetBrazilian Nanotechnology National Laboratory (LNNano) Brazilian Centre of Research in Energy and Materials (CNPEM)Department of Physics São Paulo State University (UNESP), PO Box 266Institute of Physics of São Carlos University of São Paulo (USP), PO Box 369Catarinense Federal Institute of Education Science and Technology, PO Box 21Department of Physics São Paulo State University (UNESP), PO Box 26

A new mapping of the world for the new millennium

A new mapping of the world derived from connections between cities is presented as a complement to the traditional world map of countries. Under conditions of contemporary globalization world cities have emerged as global service centres. These have been created by the location strategies of leading corporate service firms (e.g. in accountancy) in setting up their global office networks. Data on the offices of 46 global service firms in 55 world cities are used to define service connections between cities. Connections are converted into measures of network proximity and a multidimensional scaling is applied to these ‘distances’ to create a ‘global service space’ of cities. This new mapping of the world shows a distinctive centric structure with the major world cities (e.g. London) at the core. Investigation of this general structure reveals more subtle patterns of interacting regional and hierarchical tendencies