56 research outputs found
Influence of Dopants on Defect Formation in GaN
Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on c-plane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN:Be crystals
Morphological characterization of pollens from three Apiaceae species and their ingestion by twelve-spotted lady beetle (Coleoptera: Coccinellidae)
Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing
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Properties of InAlP native oxides supporting MOS inversion-layer behavior
Direction-dependent band nonparabolicity effects on high-field electron transport in GaN
Mechanism of graphite baffle gettering in organometallic vapor phase epitaxy; Adsorption of trimethylaluminum on graphite
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