The use of eigenfunction expansions in the general solution of three-dimensional crack problems

Eigenfunction expansion technique for three dimensional stress and displacement expressions in series form for infinite solids weakened by plane of discontinuity or crac

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

The current-induced spin polarization and momentum-dependent spin-orbit field were measured in In$_{x}$Ga$_{1-x}$As epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to qualitatively agree with the experimental results.Comment: 16 pages, 8 figure

A new Q-matrix in the Eight-Vertex Model

We construct a $Q$-matrix for the eight-vertex model at roots of unity for crossing parameter $\eta=2mK/L$ with odd $L$, a case for which the existing constructions do not work. The new $Q$-matrix \Q depends as usual on the spectral parameter and also on a free parameter $t$. For $t=0$ \Q has the standard properties. For $t\neq 0$, however, it does not commute with the operator $S$ and not with itself for different values of the spectral parameter. We show that the six-vertex limit of \Q(v,t=iK'/2) exists.Comment: 10 pages section on quasiperiodicity added, typo corrected, published versio

Generating Spin Currents in Semiconductors with the Spin Hall Effect

We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.Comment: 4 pages, 4 figure

Effect of plate thickness on the bending stress distribution around through cracks

Theoretical study of plate thickness effect on bending stress distribution around slotted crack

An approximate three-dimensional theory of plates with application to crack problems

Approximative three dimensional solution for crack in elastic plate