8 research outputs found

    Thermal Re-emission Model

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    Starting from a continuum description, we study the non-equilibrium roughening of a thermal re-emission model for etching in one and two spatial dimensions. Using standard analytical techniques, we map our problem to a generalized version of an earlier non-local KPZ (Kardar-Parisi-Zhang) model. In 2+1 dimensions, the values of the roughness and the dynamic exponents calculated from our theory go like α≈z≈1 \alpha \approx z \approx 1 and in 1+1 dimensions, the exponents resemble the KPZ values for low vapor pressure, supporting experimental results. Interestingly, Galilean invariance is maintained althrough.Comment: 4 pages, minor textual corrections and typos, accepted in Physical Review B (rapid

    Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications

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