An optical study of interdiffusion in ZnSe/ZnCdSe

Copyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 69, 1579 (1996) and may be found at

Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface

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Thermal stability of GaN investigated by Raman scattering

We have investigated the thermal stability of GaN using Raman scattering. Noninvasive optical monitoring of structural damage to GaN by high-temperature anneals in nitrogen ambient has been demonstrated. Characteristic features in the Raman spectrum identify three thermal stability regimes. Thermal damage between 900 and 1000 degrees C results in the appearance of a broad Raman peak between the E-2 and A(1) (LO) phonon. For anneals at temperatures higher than 1000 degrees C emerging macroscopic disorder gives rise to distinct Raman modes at 630, 656, and 770 cm(-1). Below 900 degrees C no thermal damage has been observed. The evolution of the Raman spectrum of GaN with increasing annealing temperature is discussed in terms of disorder-induced Raman scattering. We find clear indications for a reaction at the GaN/sapphire interface for anneals higher than 1000 degrees C. (C) 1998 American Institute of Physics

Growth and characterisation of Eu doped GaN thin films

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample