AgNb7O18 : an ergodic relaxor ferroelectric

AgNb7O18 is an ergodic relaxor ferroelectric at room temperature with an incipient transition to the nonergodic state. Electron diffraction confirms a locally polar symmetry, while X-ray diffraction perceives a nonpolar structure. All ions are repelled away from zones where NbO6 octahedra are edge-sharing

Quantitative high-dynamic-range electron diffraction of polar nanodomains in Pb2 ScTaO6

Highly B‐site ordered Pb2ScTaO6 crystals are studied as a function of temperature via dielectric spectroscopy and in situ high‐dynamic‐range electron diffraction. The degree of ordering is examined on the local and macroscopic scale and is determined to be 76%. Novel analysis of the electron diffraction patterns provides structural information with two types of antiferroelectric displacements determined to be present in the polar structure. It is then found that a low‐temperature transition occurs on cooling at ≈210 K that is not present on heating. This phenomenon is discussed in terms of the freezing of dynamic polar nanodomains where a high density of domain walls creates a metastable state

Retarding oxidation of copper nanoparticles without electrical isolation and the size dependence of work function

Copper nanoparticles (CuNPs) are attractive as a low-cost alternative to their gold and silver analogues for numerous applications, although their potential has hardly been explored due to their higher susceptibility to oxidation in air. Here we show the unexpected findings of an investigation into the correlation between the air-stability of CuNPs and the structure of the thiolate capping ligand: Of the 8 different ligands screened, those with the shortest alkyl chain, -(CH2)2- , and a hydrophilic carboxylic acid end group are found to be the most effective at retarding oxidation in air. We also show that CuNPs are not etched by thiol solutions as previously reported, and address the important fundamental question of how the work function of small supported metal particles scales with particle size. Together these findings set the stage for greater utility of CuNPs for emerging electronic applications

When is now? Perception of simultaneity

We address the following question: Is there a difference (D) between the amount of time for auditory and visual stimuli to be perceived? On each of 1000 trials, observers were presented with a light-sound pair, separated by a stimulus onset asynchrony (SOA) between-250 ms (sound first) and 250 ms. Observers indicated if the light-sound pair came on simultaneously by pressing one of two (yes or no) keys. The SOA most likely to yield affirmative responses was defined as the point of subjective simultaneity (PSS). PSS values were between-21 ms (i.e. sound 21ms before light) and 150 ms. Evidence is presented that each PSS is observer specific. In a second experiment, each observer was tested using two observerstimulus distances. The resultant PSS values are highly correlated (r = 0.954, p = 0.003) suggesting that each observer's PSS is stable. PSS values were significantly affected by observer-stimulus distance, suggesting that observers do not take account of changes in distance on the resultant difference in arrival times of light and sound. The difference RTd in simple reaction time to single visual and auditory stimuli was also estimated; no evidence that RTd is observer specific or stable was found. The implications of these findings for the perception of multisensory stimuli are discussed

Dislocation filters in GaAs on Si

Cross section transmission electron microscopy has been used to analyse dislocation filter layers (DFLs) in five similar structures of GaAs on Si that had different amounts of strain in the DFLs or different annealing regimes. By counting threading dislocation (TD) numbers through the structure we are able to measure relative changes, even though the absolute density is not known. The DFLs remove more than 90% of TDs in all samples. We find that the TD density in material without DFLs decays as the inverse of the square root of the layer thickness, and that DFLs at the top of the structure are considerably more efficient than those at the bottom. This indicates that the interaction radius, the distance that TDs must approach to meet and annihilate, is dependent upon the TD density

Polarization curling and flux closures in multiferroic tunnel junctions

Formation of domain walls in ferroelectrics is not energetically favourable in low-dimensional systems. Instead, vortex-type structures are formed that are driven by depolarization fields occurring in such systems. Consequently, polarization vortices have only been experimentally found in systems in which these fields are deliberately maximized, that is, in films between insulating layers. As such configurations are devoid of screening charges provided by metal electrodes, commonly used in electronic devices, it is wise to investigate if curling polarization structures are innate to ferroelectricity or induced by the absence of electrodes. Here we show that in unpoled Co/PbTiO3/(La,Sr)MnO3 ferroelectric tunnel junctions, the polarization in active PbTiO3 layers 9 unit cells thick forms Kittel-like domains, while at 6 unit cells there is a complex flux-closure curling behaviour resembling an incommensurate phase. Reducing the thickness to 3 unit cells, there is an almost complete loss of switchable polarization associated with an internal gradient

Growth and characterisation of InAsP/AlGaInP QD laser structures

We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots on AlGaInP/GaAs. The properties of InAsP QD laser structures were compared with reference samples containing binary InP QDs. Based on X-ray diffraction, the molar fraction of As in InAsP QDs was estimated to be ~25%. Room temperature liquid contact electro-luminescence measurements revealed a long wavelength shift of the InAsP QD emission to ~775 nm as compared with the InP QD emission at 716 nm and an increased full width at half maximum of the spontaneous emission (71 meV vs 50 meV). As cleaved, 4 mm long and 50 μm wide InAsP QD lasers operated in a pulsed regime at room temperature at ~770 nm with a threshold current density of 155 A/cm2 and a maximum output optical power of at least ~200 mW. The maximum operation temperature was at least 380 K

Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon

Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits

Atomic structure study of the pyrochlore Yb₂Ti₂O₇ and its relationship with low-temperature magnetic order

There has been great interest in the magnetic behavior of pyrochlore oxides with the general formula A2B2O7, in which rare-earth (A) and transition metal (B) cations are ordered on separate interpenetrating lattices of corner-sharing tetrahedra. Such materials exhibit behaviors including quantum spin-ice, (quantum) spin-liquid, and ordered magnetic ground states. Yb2Ti2O7 lies on the boundary between a number of competing magnetic ground states. Features in the low-temperature specific heat capacity that vary in sharpness and temperature from sample to sample suggest that, in some cases, the magnetic moments order, while in others, the moments remain dynamic down to temperatures as low as ∼16 mK. In this paper, three different Yb2Ti2O7 samples, all grown by the optical floating zone technique but exhibiting quite different heat capacity behavior, are studied by aberration-corrected scanning transmission microscopy (STEM). Atomic-scale energy-dispersive x-ray analysis shows that a crystal with no specific heat anomaly has substitution of Yb atoms on Ti sites (stuffing). We show that the detailed intensity distribution around the visible atomic columns in annular dark field STEM images is sensitive to the presence of nearby atoms of low atomic number (in this case oxygen) and find significant differences between the samples that correlate both with their magnetic behavior and measurements of Ti oxidation state using electron energy loss spectroscopy. These measurements support the view that the magnetic ground state of Yb2Ti2O7 is extremely sensitive to disorder