1,095 research outputs found
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
Three-dimensional (3D) topological insulators (TI) are novel quantum
materials with insulating bulk and topologically protected metallic surfaces
with Dirac-like band structure. The spin-helical Dirac surface states are
expected to host exotic topological quantum effects and find applications in
spintronics and quantum computation. The experimental realization of these
ideas requires fabrication of versatile devices based on bulk-insulating TIs
with tunable surface states. The main challenge facing the current TI materials
exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which
remains unsolved despite extensive efforts involving nanostructuring, chemical
doping and electrical gating. Here we report a novel approach for engineering
the band structure of TIs by molecular beam epitaxy (MBE) growth of
(Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy
(ARPES) and transport measurements show that the topological surface states
exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1),
indicating the robustness of bulk Z2 topology. Most remarkably, the systematic
band engineering leads to ideal TIs with truly insulating bulk and tunable
surface state across the Dirac point that behave like one quarter of graphene.
This work demonstrates a new route to achieving intrinsic quantum transport of
the topological surface states and designing conceptually new TI devices with
well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information
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Aharonov-Bohm interference in topological insulator nanoribbons
Topological insulators represent novel phases of quantum matter with an
insulating bulk gap and gapless edges or surface states. The two-dimensional
topological insulator phase was predicted in HgTe quantum wells and confirmed
by transport measurements. Recently, Bi2Se3 and related materials have been
proposed as three-dimensional topological insulators with a single Dirac cone
on the surface and verified by angle-resolved photoemission spectroscopy
experiments. Here, we show unambiguous transport evidence of topological
surface states through periodic quantum interference effects in layered
single-crystalline Bi2Se3 nanoribbons. Pronounced Aharonov-Bohm oscillations in
the magnetoresistance clearly demonstrate the coverage of two-dimensional
electrons on the entire surface, as expected from the topological nature of the
surface states. The dominance of the primary h/e oscillation and its
temperature dependence demonstrate the robustness of these electronic states.
Our results suggest that topological insulator nanoribbons afford novel
promising materials for future spintronic devices at room temperature.Comment: 5 pages, 4 figures, RevTex forma
An optimum medium designed and verified for alcohol vinegar fermentation
In this article, a novel formula of nutrient salt for alcohol vinegar production was derived based on mass conservation theory of carbon source, nitrogen source and inorganic ions. Series of semicontinuous fermentations were successfully carried out in a Frings 10 L fermentation tank. The average acetification rate of semi-continuous fermentation was 2 g acetic acid/L*h within about 12 h, average stoichiometric yield was 94%, and then fed-batch trial for high concentration vinegar fermentation was successfully conducted. Both of these confirmed that this method applied was cost-effective. If this method is adopted in industry scale, vinegar manufacturers will reduce production cost significantly.Key words: Formula, alcohol vinegar, fermentation nutrient
Integrable and Chaotic Dynamics of Spins Coupled to an Optical Cavity
We show that a class of random all-to-all spin models, realizable in systems of atoms coupled to an optical cavity, gives rise to a rich dynamical phase diagram due to the pairwise separable nature of the couplings. By controlling the experimental parameters, one can tune between integrable and chaotic dynamics on the one hand and between classical and quantum regimes on the other hand. For two special values of a spin-anisotropy parameter, the model exhibits rational Gaudin-type integrability, and it is characterized by an extensive set of spin-bilinear integrals of motion, independent of the spin size. More generically, we find a novel integrable structure with conserved charges that are not purely bilinear. Instead, they develop "dressing tails" of higher-body terms, reminiscent of the dressed local integrals of motion found in many-body localized phases. Surprisingly, this new type of integrable dynamics found in finite-size spin-1/2 systems disappears in the large-S limit, giving way to classical chaos. We identify parameter regimes for characterizing these different dynamical behaviors in realistic experiments, in view of the limitations set by cavity dissipation
Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and
experimentally realized in a quantum wells based on binary semiconductor
HgTe[1-3]. QSH state and topological insulators are the new states of quantum
matter interesting both for fundamental condensed matter physics and material
science[1-11]. Many of Heusler compounds with C1b structure are ternary
semiconductors which are structurally and electronically related to the binary
semiconductors. The diversity of Heusler materials opens wide possibilities for
tuning the band gap and setting the desired band inversion by choosing
compounds with appropriate hybridization strength (by lattice parameter) and
the magnitude of spin-orbit coupling (by the atomic charge). Based on the
first-principle calculations we demonstrate that around fifty Heusler compounds
show the band inversion similar to HgTe. The topological state in these
zero-gap semiconductors can be created by applying strain or by designing an
appropriate quantum well structure, similar to the case of HgTe. Many of these
ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the
rare earth element Ln which can realize additional properties ranging from
superconductivity (e. g. LaPtBi[12]) to magnetism (e. g. GdPtBi[13]) and
heavy-fermion behavior (e. g. YbPtBi[14]). These properties can open new
research directions in realizing the quantized anomalous Hall effect and
topological superconductors.Comment: 20 pages, 5 figure
Real-time counting of single electron tunneling through a T-shaped double quantum dot system
Real-time detection of single electron tunneling through a T-shaped double
quantum dot is simulated, based on a Monte Carlo scheme. The double dot is
embedded in a dissipative environment and the presence of electrons on the
double dot is detected with a nearby quantum point contact. We demonstrate
directly the bunching behavior in electron transport, which leads eventually to
a super-Poissonian noise. Particularly, in the context of full counting
statistics, we investigate the essential difference between the dephasing
mechanisms induced by the quantum point contact detection and the coupling to
the external phonon bath. A number of intriguing noise features associated with
various transport mechanisms are revealed.Comment: 8 pages, 5 figure
In-Plane Orbital Texture Switch at the Dirac Point in the Topological Insulator Bi2Se3
Topological insulators are novel macroscopic quantum-mechanical phase of
matter, which hold promise for realizing some of the most exotic particles in
physics as well as application towards spintronics and quantum computation. In
all the known topological insulators, strong spin-orbit coupling is critical
for the generation of the protected massless surface states. Consequently, a
complete description of the Dirac state should include both the spin and
orbital (spatial) parts of the wavefunction. For the family of materials with a
single Dirac cone, theories and experiments agree qualitatively, showing the
topological state has a chiral spin texture that changes handedness across the
Dirac point (DP), but they differ quantitatively on how the spin is polarized.
Limited existing theoretical ideas predict chiral local orbital angular
momentum on the two sides of the DP. However, there have been neither direct
measurements nor calculations identifying the global symmetry of the spatial
wavefunction. Here we present the first results from angle-resolved
photoemission experiment and first-principles calculation that both show,
counter to current predictions, the in-plane orbital wavefunctions for the
surface states of Bi2Se3 are asymmetric relative to the DP, switching from
being tangential to the k-space constant energy surfaces above DP, to being
radial to them below the DP. Because the orbital texture switch occurs exactly
at the DP this effect should be intrinsic to the topological physics,
constituting an essential yet missing aspect in the description of the
topological Dirac state. Our results also indicate that the spin texture may be
more complex than previously reported, helping to reconcile earlier conflicting
spin resolved measurements
Topological Crystalline Insulators in the SnTe Material Class
Topological crystalline insulators are new states of matter in which the
topological nature of electronic structures arises from crystal symmetries.
Here we predict the first material realization of topological crystalline
insulator in the semiconductor SnTe, by identifying its nonzero topological
index. We predict that as a manifestation of this nontrivial topology, SnTe has
metallic surface states with an even number of Dirac cones on high-symmetry
crystal surfaces such as {001}, {110} and {111}. These surface states form a
new type of high-mobility chiral electron gas, which is robust against disorder
and topologically protected by reflection symmetry of the crystal with respect
to {110} mirror plane. Breaking this mirror symmetry via elastic strain
engineering or applying an in-plane magnetic field can open up a continuously
tunable band gap on the surface, which may lead to wide-ranging applications in
thermoelectrics, infrared detection, and tunable electronics. Closely related
semiconductors PbTe and PbSe also become topological crystalline insulators
after band inversion by pressure, strain and alloying.Comment: submitted on Feb. 10, 2012; to appear in Nature Communications; 5
pages, 4 figure
The space group classification of topological band insulators
Topological band insulators (TBIs) are bulk insulating materials which
feature topologically protected metallic states on their boundary. The existing
classification departs from time-reversal symmetry, but the role of the crystal
lattice symmetries in the physics of these topological states remained elusive.
Here we provide the classification of TBIs protected not only by time-reversal,
but also by crystalline symmetries. We find three broad classes of topological
states: (a) Gamma-states robust against general time-reversal invariant
perturbations; (b) Translationally-active states protected from elastic
scattering, but susceptible to topological crystalline disorder; (c) Valley
topological insulators sensitive to the effects of non-topological and
crystalline disorder. These three classes give rise to 18 different
two-dimensional, and, at least 70 three-dimensional TBIs, opening up a route
for the systematic search for new types of TBIs.Comment: Accepted in Nature Physic
Strain-induced partially flat band, helical snake states, and interface superconductivity in topological crystalline insulators
Topological crystalline insulators in IV-VI compounds host novel topological
surface states consisting of multi-valley massless Dirac fermions at low
energy. Here we show that strain generically acts as an effective gauge field
on these Dirac fermions and creates pseudo-Landau orbitals without breaking
time-reversal symmetry. We predict the realization of this phenomenon in IV-VI
semiconductor heterostructures, due to a naturally occurring misfit dislocation
array at the interface that produces a periodically varying strain field.
Remarkably, the zero-energy Landau orbitals form a flat band in the vicinity of
the Dirac point, and coexist with a network of snake states at higher energy.
We propose that the high density of states of this flat band gives rise to
interface superconductivity observed in IV-VI semiconductor multilayers at
unusually high temperatures, with non-BCS behavior. Our work demonstrates a new
route to altering macroscopic electronic properties to achieve a partially flat
band, and paves the way for realizing novel correlated states of matter.Comment: Accepted by Nature Physic
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