4 research outputs found
Twinning superlattices in indium phosphide nanowires
Here, we show that we control the crystal structure of indium phosphide (InP)
nanowires by impurity dopants. We have found that zinc decreases the activation
barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the
InP nanowires to crystallise in the zinc blende, instead of the commonly found
wurtzite crystal structure. More importantly, we demonstrate that we can, by
controlling the crystal structure, induce twinning superlattices with
long-range order in InP nanowires. We can tune the spacing of the superlattices
by the wire diameter and the zinc concentration and present a model based on
the cross-sectional shape of the zinc-blende InP nanowires to quantitatively
explain the formation of the periodic twinning.Comment: 18 pages, 4 figure
Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots
Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire
Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. We report here detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates and utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO(2). We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures