Monolithic semiconductor lasers with dynamically tunable linear-to-circular polarization

The ability to control the polarization state of emission from semiconductor lasers is essential for many applications in spectroscopy, imaging, and communications, inter alia, with monolithic integration approaches being extremely beneficial. Although manipulating the output polarization of radiation from a laser can be achieved through a number of approaches, obtaining continuous dynamic control, e.g., from linear to circular, remains extremely challenging. In this paper, we demonstrate that the polarization of terahertz (THz) frequency radiation can be continuously tuned electronically from linear to circular polarization by monolithically integrating in-plane metasurfaces with two phase-locked semiconductor-based THz quantum cascade lasers. Moreover, the metasurfaces—metal antenna arrays in this case—also act as efficient beam collimators, yielding a collimated beam divergence of ∼10° × 10°. Our results, however, have broad applicability to a wide range of semiconductor lasers operating from the visible to THz regions of the electromagnetic spectrum

Microstructures and resistivity of cuprate/manganite bilayer deposited on SrTiO3 substrate

Thin Yba[SUB2]Cu[SUB3]O[SUB7-δ/La[SUB0.67]Ca[SUB0.33]MnO[SUB3] (YBCO/LCMO) films were grown on SrTiO[SUB3](STO)substrates by magnetron sputtering technique. The microstructures of the bilayers were characterized and a standard four-probe technique was applied to measure the resistivity of the samples. The interdiffusions at the YBCO/LCMO and LCMO/STO interfaces formed two transient layers with the thickness of about 3 and 2 nm, respectively. All the bilayers were well textured along the c axis. At low temperature, the superconductivity can only be observed when the thickness of YBCO is more than 25 nm. When the thickness of YBCO is less than 8 nm, the bilayers show only ferromagnetism. The superconductivity and ferromagnetism perhaps coexist in the bilayer with the YBCO thickness of 12.5 nm. These interesting properties are related to the interaction between spin polarized electrons in the manganites and the cooper pairs in the cuprates. © 2003 American Institute of Physics.published_or_final_versio

Designer Multimode Localized Random Lasing in Amorphous Lattices at Terahertz Frequencies

Random lasers are a special class of laser in which light is confined through multiple scattering and interference process in a disordered medium, without a traditional optical cavity. They have been widely studied to investigate fundamental phenomena such as Anderson localization, and for applications such as speckle-free imaging, benefitting from multiple lasing modes. However, achieving controlled localized multi-mode random lasing at long wavelengths, such as in the terahertz (THz) frequency regime, remains a challenge. Here, we study devices consisting of randomly-distributed pillars fabricated from a quantum cascade gain medium, and show that such structures can achieve transversemagnetic polarized (TM) multi-mode random lasing, with strongly localized modes at THz frequencies. The weak short-range order induced by the pillar distribution is sufficient to ensure high quality-factor modes that have a large overlap with the active material. Furthermore, the emission spectrum can be easily tuned by tailoring the scatterer size and filling fraction. These “designer” random lasers, realized using standard photolithography 2 techniques, provide a promising platform for investigating disordered photonics with predesigned randomness in the THz frequency range, and may have potential applications such as speckle-free imaging

Resonances in J/ψ→ϕπ+π−J/\psi \to \phi \pi ^+\pi ^- and ϕK+K−\phi K^+K^-

A partial wave analysis is presented of $J/\psi \to \phi \pi ^+\pi ^-$ and $\phi K^+K^-$ from a sample of 58M $J/\psi$ events in the BES II detector. The $f_0(980)$ is observed clearly in both sets of data, and parameters of the Flatt\' e formula are determined accurately: $M = 965 \pm 8$ (stat) $\pm 6$ (syst) MeV/c$^2$, $g_1 = 165 \pm 10 \pm 15$ MeV/c$^2$, $g_2/g_1 = 4.21 \pm 0.25 \pm 0.21$. The $\phi \pi \pi$ data also exhibit a strong $\pi \pi$ peak centred at $M = 1335$ MeV/c$^2$. It may be fitted with $f_2(1270)$ and a dominant $0^+$ signal made from $f_0(1370)$ interfering with a smaller $f_0(1500)$ component. There is evidence that the $f_0(1370)$ signal is resonant, from interference with $f_2(1270)$. There is also a state in $\pi \pi$ with $M = 1790 ^{+40}_{-30}$ MeV/c$^2$ and $\Gamma = 270 ^{+60}_{-30}$ MeV/c$^2$; spin 0 is preferred over spin 2. This state, $f_0(1790)$, is distinct from $f_0(1710)$. The $\phi K\bar K$ data contain a strong peak due to $f_2'(1525)$. A shoulder on its upper side may be fitted by interference between $f_0(1500)$ and $f_0(1710)$.Comment: 17 pages, 6 figures, 1 table. Submitted to Phys. Lett.

Measurement of the Branching Fraction of J/psi --> pi+ pi- pi0

Using 58 million J/psi and 14 million psi' decays obtained by the BESII experiment, the branching fraction of J/psi --> pi+ pi- pi0 is determined. The result is (2.10+/-0.12)X10^{-2}, which is significantly higher than previous measurements.Comment: 9 pages, 8 figures, RevTex

Search for K_S K_L in psi'' decays

K_S K_L from psi'' decays is searched for using the psi'' data collected by BESII at BEPC, the upper limit of the branching fraction is determined to be B(psi''--> K_S K_L) < 2.1\times 10^{-4} at 90% C. L. The measurement is compared with the prediction of the S- and D-wave mixing model of the charmonia, based on the measurements of the branching fractions of J/psi-->K_S K_L and psi'-->K_S K_L.Comment: 5 pages, 1 figur

First Measurements of eta_c Decaying into K^+K^-2(pi^+pi^-) and 3(pi^+pi^-)

The decays of eta_c to K^+K^-2(pi^+pi^-) and 3(pi^+pi^-) are observed for the first time using a sample of 5.8X10^7 J/\psi events collected by the BESII detector. The product branching fractions are determined to be B(J/\psi-->gamma eta_c)*B(eta_c-->K^+K^-pi^+pi^-pi^+pi^-)=(1.21+-0.32+- 0.23)X10^{-4}$,B(J/\psi-->gamma eta_c)*B(eta_c-->K^{*0}\bar{K}^{*0}pi^+pi^-)= (1.29+-0.43+-0.32)X10^{-4}$, and (J/\psi-->gamma eta_c)* B(eta_c-->pi^+pi^-pi^+pi^-pi^+pi^-)= (2.59+-0.32+-0.48)X10^{-4}. The upper limit for eta_c-->phi pi^+pi^-pi^+pi^- is also obtained as B(J/\psi-->gamma eta_c)*B(eta_c--> phi pi^+pi^-pi^+pi^-)< 6.03 X10^{-5} at the 90% confidence level.Comment: 11 pages, 4 figure

First observation of psi(2S)-->K_S K_L

The decay psi(2S)-->K_S K_L is observed for the first time using psi(2S) data collected with the Beijing Spectrometer (BESII) at the Beijing Electron Positron Collider (BEPC); the branching ratio is determined to be B(psi(2S)-->K_S K_L) = (5.24\pm 0.47 \pm 0.48)\times 10^{-5}. Compared with J/psi-->K_S K_L, the psi(2S) branching ratio is enhanced relative to the prediction of the perturbative QCD ``12%'' rule. The result, together with the branching ratios of psi(2S) decays to other pseudoscalar meson pairs (\pi^+\pi^- and K^+K^-), is used to investigate the relative phase between the three-gluon and the one-photon annihilation amplitudes of psi(2S) decays.Comment: 5 pages, 4 figures, 2 tables, submitted to Phys. Rev. Let

Study of psi(2S) decays to X J/psi

Using J/psi -> mu^+ mu^- decays from a sample of approximately 4 million psi(2S) events collected with the BESI detector, the branching fractions of psi(2S) -> eta J/psi, pi^0 pi^0 J/psi, and anything J/psi normalized to that of psi(2S) -> pi^+ pi^- J/psi are measured. The results are B(psi(2S) -> eta J/psi)/B(psi(2S) -> pi^+ pi^- J/psi) = 0.098 \pm 0.005 \pm 0.010, B(psi(2S) -> pi^0 pi^0 J/psi)/B(psi(2S) -> pi^+ pi^- J/psi) = 0.570 \pm 0.009 \pm 0.026, and B(psi(2S) -> anything J/psi)/B(psi(2S) -> pi^+ pi^- J/psi) = 1.867 \pm 0.026 \pm 0.055.Comment: 13 pages, 8 figure

Integrated Terahertz Graphene Modulator with 100% Modulation Depth

Terahertz (THz) frequency technology has many potential applications in nondestructive imaging, spectroscopic sensing, and high-bit-rate free-space communications, with an optical modulator being a key component. However, it has proved challenging to achieve high-speed modulation with a high modulation depth across a broad bandwidth of THz frequencies. Here, we demonstrate that a monolithically integrated graphene modulator can efficiently modulate the light intensity of the THz radiation from a THz quantum cascade laser with a 100% modulation depth for certain region of the pumping current, as a result of the strongly enhanced interaction between the laser field and the graphene enabled by this integration scheme. Moreover, the small area of the resulting device in comparison to existing THz modulators enables a faster modulation speed, greater than 100 MHz, which can be further improved through optimized designs of the laser cavity and modulator architectures. Furthermore, as the graphene absorption spectrum is broadband in nature, our integration scheme can be readily scaled to other wavelength regions, such as the mid-infrared, and applied to a broad range of other optoelectronic devices