Testing effort dependent software reliability model for imperfect debugging process considering both detection and correction

This paper studies the fault detection process (FDP) and fault correction process (FCP) with the incorporation of testing effort function and imperfect debugging. In order to ensure high reliability, it is essential for software to undergo a testing phase, during which faults can be detected and corrected by debuggers. The testing resource allocation during this phase, which is usually depicted by the testing effort function, considerably influences not only the fault detection rate but also the time to correct a detected fault. In addition, testing is usually far from perfect such that new faults may be introduced. In this paper, we first show how to incorporate testing effort function and fault introduction into FDP and then develop FCP as delayed FDP with a correction effort. Various specific paired FDP and FCP models are obtained based on different assumptions of fault introduction and correction effort. An illustrative example is presented. The optimal release policy under different criteria is also discussed

Hot deformation behavior and processing maps of diamond/Cu composites

The hot deformation behaviors of 50 vol pct uncoated and Cr-coated diamond/Cu composites were investigated using hot isothermal compression tests under the temperature and strain rate ranging from 1073 K to 1273 K (800 C to 1000 C) and from 0.001 to 5 s1, respectively. Dynamic recrystallization was determined to be the primary restoration mechanism during deformation. The Cr3C2 coating enhanced the interfacial bonding and resulted in a larger flow stress for the Cr-coated diamond/Cu composites. Moreover, the enhanced interfacial affinity led to a higher activation energy for the Cr-coated diamond/Cu composites (238 kJ/mol) than for their uncoated counterparts (205 kJ/mol). The strain-rate-dependent constitutive equations of the diamond/Cu composites were derived based on the Arrhenius model, and a high correlation (R = 0.99) was observed between the calculated flow stresses and experimental data. With the help of processing maps, hot extrusions were realized at 1123 K/0.01 s1 and 1153 K/0.01 s1 (850 C/0.01 s1 and 880 C/0.01 s1) for the uncoated and coated diamond/Cu composites, respectively. The combination of interface optimization and hot extrusion led to increases of the density and thermal conductivity, thereby providing a promising route for the fabrication of diamond/Cu composites

Determination of the number of J/ψ events with inclusive J/ψ decays

A measurement of the number of J/ψ events collected with the BESIII detector in 2009 and 2012 is performed using inclusive decays of the J/ψ. The number of J/ψ events taken in 2009 is recalculated to be (223.7 ± 1.4) × 106, which is in good agreement with the previous measurement, but with significantly improved precision due to improvements in the BESIII software. The number of J/ψ events taken in 2012 is determined to be (1086.9 ± 6.0) × 106. In total, the number of J/ψ events collected with the BESIII detector is measured to be (1310.6 ± 7.0) × 106, where the uncertainty is dominated by systematic effects and the statistical uncertainty is negligible

Measurements of the center-of-mass energies at BESIII via the di-muon process

From 2011 to 2014, the BESIII experiment collected about 5 fb-1 data at center-of-mass energies around 4 GeV for the studies of the charmonium-like and higher excited charmonium states. By analyzing the di-muon process e+e- → γISR/FSRμ+μ-, the center-of-mass energies of the data samples are measured with a precision of 0.8 MeV. The center-of-mass energy is found to be stable for most of the time during data taking

Measurement of the absolute branching fraction for Λc+→Λμ+νμ

We report the first measurement of the absolute branching fraction for Λc+→Λμ+νμ. This measurement is based on a sample of e+e− annihilation data produced at a center-of-mass energy s=4.6 GeV, collected with the BESIII detector at the BEPCII storage rings. The sample corresponds to an integrated luminosity of 567 pb−1. The branching fraction is determined to be B(Λc+→Λμ+νμ)=(3.49±0.46(stat)±0.27(syst))%. In addition, we calculate the ratio B(Λc+→Λμ+νμ)/B(Λc+→Λe+νe) to be 0.96±0.16(stat)±0.04(syst)