17 research outputs found

    A multiphysics modeling and experimental analysis of pressure contacts in power electronics applications

    Get PDF
    This paper details a modeling and experimental assessment of the packaging process for a silicon carbide Schottky diode using pressure contacts. The work detailed in this paper is original, as it applies a combined electrothermomechanical modeling analysis to this packaging method supported by experimental validation. A key design objective for this packaging process is to identify suitable contact pad materials, heatsinks, and process variables such as clamping force to meet electrical, thermal, and reliability specifications. Molybdenum and aluminum graphite (ALG) have been identified as two suitable materials for the contact pads. Clamping forces ranging from 300 to 500 N and electric current ranging from 10 to 30 A have been investigated in terms of the resulting electrical and thermal contact resistances, temperatures, and stresses induced across the package. The performance of two heatsink designs with heat dissipation rates of 12893 and 4991 W/m2k has also been investigated. Both the modeling and initial experimental results detailed in this paper show that ALG provides better performance in terms of generating a lower average chip temperature. Both temperature and stress in the diode are predicted as a function of clamping force and load current. This will aid the packaging engineer to identify suitable process parameters to meet junction temperature requirements at different applied load currents

    Design of additively manufactured heatsinks for power electronics thermal management using adjoint level-set topology optimization

    Get PDF
    This paper investigates the potential of using the Adjoint Level-set topological optimization approach for design of additively manufactured power electronics heat sinks. Additive manufacturing techniques are readily able to fabricate highly complex metal geometries. This capability could be translated into development of higher performance thermal management solutions if the design methodology to exploit this potential. This study attempts to investigate the ability of topology optimization to meet this requirement. This paper provides a brief review of the current state-of-the-art in the topological optimization field. An overview of the Adjoint Level-set method is presented along with details of the implemented framework. This framework is used to design power electronics heatsinks, considering a combination of materials and fluid flow rates. The analysis is multi-objective, simultaneously considering heat extraction and flow pressure difference. The heat flux into the heatsink is considered to be from two discrete heat fluxes representing active packages within the power module. The cooling channels developed by the topology optimization framework react to the position of the heat sources. Results demonstrating the capability for topological optimization to develop effective thermal management solution are presented. The primary conclusions for the study are that this is an area that is worth of further investigation. Significant challenges need to be addressed, particularly relating to the rapid increase in computational cost as flow rates increase, before this technology can be transitioned to commercial adoptio

    Evaluation of SiC Schottky diodes using pressure contacts

    Get PDF
    The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristor- based applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reverse conduction capability. In these high power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC) meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated
    corecore