Activation analysis of admixtures in certain semiconductive materials

The use of extractions and chromatographic operations to separate macrobases, and to divide elements into groups convenient for gamma-spectrometric analysis is discussed. Methods are described for the activation detection of some impurities in silicon, arsenic, thallium, and trichloromethylsilane, on the basis of the extraction properties of bis(2-chlorethyl ether) and dimethylbenzylalkylammonium chloride. A schematic diagram of the extraction separation of elements-admixture is presented showing the aqueous and organic phases. The content percentage of the various elements are given in tables

Compositional variation of thin PZT films near morphotropic phase boundary: experiment and simulation

The work was partly supported by the Ministry for Education and Science (Russian Federation) (Grant No 16.2811.2017/4.6) and RFBR (Grant No 16-02-00632)

Spin excitations of the correlated semiconductor FeSi probed by THz radiation

By direct measurements of the complex optical conductivity $\sigma(\nu)$ of FeSi we have discovered a broad absorption peak centered at frequency $\nu_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34\pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.Comment: 5 pages, 4 figure

Highly anisotropic energy gap in superconducting Ba(Fe0.9_{0.9}Co0.1_{0.1})2_{2}As2_{2} from optical conductivity measurements

We have measured the complex dynamical conductivity, $\sigma = \sigma_{1} + i\sigma_{2}$, of superconducting Ba(Fe$_{0.9}$Co$_{0.1}$)$_{2}$As$_{2}$ ($T_{c} = 22$ K) at terahertz frequencies and temperatures 2 - 30 K. In the frequency dependence of $\sigma_{1}$ below $T_{c}$, we observe clear signatures of the superconducting energy gap opening. The temperature dependence of $\sigma_{1}$ demonstrates a pronounced coherence peak at frequencies below 15 cm$^{-1}$ (1.8 meV). The temperature dependence of the penetration depth, calculated from $\sigma_{2}$, shows power-law behavior at the lowest temperatures. Analysis of the conductivity data with a two-gap model, gives the smaller isotropic s-wave gap of $\Delta_{A} = 3$ meV, while the larger gap is highly anisotropic with possible nodes and its rms amplitude is $\Delta_{0} = 8$ meV. Overall, our results are consistent with a two-band superconductor with an $s_{\pm}$ gap symmetry.Comment: 6 pages, 4 figures, discussion on pair-barking scattering and possible lifting of the nodes is adde

Optical conductivity of multifold fermions: the case of RhSi

We measured the reflectivity of the multifold semimetal RhSi in a frequency range from 80 to 20000 cm$^{-1}$ (10 meV - 2.5 eV) at temperatures down to 10 K. The optical conductivity, calculated from the reflectivity, is dominated by the free-carrier (Drude) contribution below 1000 cm$^{-1}$ (120 meV) and by interband transitions at higher frequencies. The temperature-induced changes in the spectra are generally weak: only the Drude bands narrow upon cooling, with an unscreened plasma frequency that is constant with temperature at approximately 1.4 eV, in agreement with a weak temperature dependence of the free-carrier concentration determined by Hall measurements. The interband portion of conductivity exhibits two linear-in-frequency regions below 5000 cm$^{-1}$ ($\sim$ 600 meV), a broad flat maximum at around 6000 cm$^{-1}$ (750 meV), and a further increase starting around 10000 cm$^{-1}$ ($\sim$ 1.2 eV). We assign the linear behavior of the interband conductivity to transitions between the linear bands near the band crossing points. Our findings are in accord with the predictions for the low-energy conductivity behavior in multifold semimetals and with earlier computations based on band structure calculations for RhSi.Comment: 7 pages, supplemental material added, figures improve