Absorption features of the zero frequency mode in an ultra-thin slab

© 2014 AIP Publishing LLC. The optical absorption in a homogeneous and non-dispersive slab is governed by the well-known Fabry-Perot resonances. We have found that below the lowest order Fabry-Perot resonance, there is another absorption maximum due to the zero frequency mode whose peak frequency is given not by the real part of the complex resonance frequency, as it is the case for all other resonances, but by the imaginary part. This result is of interest, among other applications, for ultra thin solar cells, as tuning the zero frequency mode peak with the maximum of solar irradiance results in an increased efficiency.This work has been supported by Spanish MINECO (Grant Nos. ENE2012-37804-C02-02 and TEC2011-29120-C05-04).Peer Reviewe

Room temperature, continuous-wave coupled-cavity InAsP/InP photonic crystal laser with enhanced far-field emission directionality

We demonstrate room temperature, continuous-wave lasing with enhanced far field emission directionality in coupled-cavity photonic crystal lasers, made with InAsP/InP quantum well material. These surface-emitting lasers can have a very low effective threshold power of 14.6 µW, with a linewidth of 60 pm, and 40% of the surface emitted power concentrated within a small divergence angle of ±30°

Dispositivo para la detección de una única molécula en situación de nanoconfinamiento y en régimen dinámico, procedimiento de fabricación y uso

El objeto de la presente invención está relacionado con un dispositivo que integra estructuras de cristal fotónico y micro-nanocanales para la manipulación y detección de moléculas de ADN y otras moléculas con marcadores luminiscentes. El dispositivo, basado en la capacidad de las guías fotónicas de direccionar las ondas electromagnéticas, concentra la señal de emisión de la molécula en respuesta a una señal de excitación en una dirección dada. Son igualmente objetos de la presente invención el procedimiento de fabricación del dispositivo y el uso del mismo para la detección de una única molécula en situación de nanoconfinamiento y en régimen dinámico.Peer reviewedConsejo Superior de Investigaciones Científicas, Fundación TeknikerR Informe sobre el estado de la técnica publicado separadament

Fabrication and characterization of 2D photonic crystals for new optoelectronic devices

Photonic crystals were discovered in the 80s as a possible solution to the control of the spontaneous emission and localization of light. Nevertheless only in recent years, with the spreading of nanotechnologies, the first applications with high technological impact have been achieved, like planar photonic crystal lasers or the nanostructured photonic crystal waveguides. Nowadays new types of optoelectronic devices like single photon emitters based on photonic crystal nanocavities are being pursued. In this talk we will show the fabrication and characterization of new photonic bandgap devices, like Suzuki-phase laser emitters or ring-like emitters, and we will show their emission properties in the far field and their tuning by the fabrication process. These new devices may be used as new optical sensors and as efficient nanosources of laser light.Los cristales fotónicos fueron planteados a finales de los años ochenta como una posible solución al control de la emisión espontánea y a la localización de la luz. Sin embargo, sólo en los últimos años, con el advenimiento de las tecnologías de nanofabricación, se han conseguido las primeras aplicaciones prácticas de elevado impacto tecnológico, como los láseres de cristal fotónico o las guías de onda nanoestructuradas con gap fotónico. En la actualidad se están planteando nuevos dispositivos que permitan la emisión eficiente de un solo fotón o la captura de un átomo en el interior de una nanocavidad de cristal fotónico. En este seminario se mostrará la fabricación y caracterización de nuevos dispositivos con gap fotónico, como emisores láser de fase Suzuki o resonadores láser de anillo, y se mostrarán sus propiedades de emisión en el campo lejano y de sintonización mediante el control preciso del proceso de fabricación. Estos nuevos dispositivos pueden ser usados como nuevos sensores ópticos y como eficientes nanoemisores de luz láser.A. R. Alija agradece una beca predoctoral FPU AP2002-0474 del MEC. L. J. Martínez agradece una beca predoctoral I3P-CSIC. P. A. Postigo agradece un contrato "Ramón y Cajal" y los proyectos CAM GR\MAT\0729\2004 y CICYT TIC2002- 04096-C03-03.Peer reviewe

Room temperature, continuous-wave coupled-cavity InAsP/InP photonic crystal laser with enhanced far-field emission directionality

We demonstrate room temperature, continuous-wave lasing with enhanced far field emission directionality in coupled-cavity photonic crystal lasers, made with InAsP/InP quantum well material. These surface-emitting lasers can have a very low effective threshold power of 14.6 μW, with a linewidth of 60 pm, and 40 of the surface emitted power concentrated within a small divergence angle of ±30°. © 2011 American Institute of Physics.The authors would like to acknowledge support from the Defense Advanced Research Projects Agency under the Nanoscale Architecture for Coherent Hyperoptical Sources programme under Grant No. #W911NF-07-1-0277 and from the National Science Foundation through NSF CIAN ERC under Grant No. #EEC-0812072. J. G. would like to acknowledge support from NSF Research Experience for Teachers (RET) program through NSF CIAN ERC. P. A. P. would like to acknowledge financial support from Spanish MICINN and CAM through grants NANINPHO-QD (TEC2008- 06756-C03-01/03), CAM2010 Q&C Light (S2009ESP-1503) and Consolider-Ingenio 2010 QOIT (CSD2006-0019).Peer Reviewe

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics

We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ∼14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)^3, is a promising and efficient light source for silicon photonics

High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes

We report the design, growth, fabrication, and characterization of GaAs-based high-speed p–i–n photodiodes operating at 1.55 μm. A low-temperature-grown GaAs (LT-GaAs) layer was used as the absorption layer and the photoresponse was selectively enhanced at 1.55 μm using a resonant-cavity-detector structure. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror. Molecular-beam epitaxy was used for wafer growth, where the active LT-GaAs layer was grown at a substrate temperature of 200 °C. The fabricated devices exhibited a resonance around 1548 nm. When compared to the efficiency of a conventional single-pass detector, an enhancement factor of 7.5 was achieved. Temporal pulse-response measurements were carried out at 1.55 μm. Fast pulse responses with 30 ps pulse-width and a corresponding 3 dB bandwidth of 11.2 GHz was measured.This work was supported by NATO Grant No. SfP971970, Turkish Department of Defense Grant No.KOBRA-001, Thales JP8.04, CAM 07N/0059/2002 and ‘‘NANOSELF’’ TIC2002-04096-C03-03. E.O. acknowledges partial support received from Turkish Academy of Sciences.Peer reviewe

III-V semiconductor quantum dots for efficient quantum light sources

Comunicación presentada en el 3rd international Workshop Engineering of quantum emitter properties, celebrado en Linz (Austria) el 17 y 18 de diciembre de 2015.Photonic crystal microcavities (PCMs) with embedded quantum dots (QDs) have been shown as excellent test bed systems for experiments in the field of cavity quantum electrodynamics (c-QED) that may open doors to efficient quantum photonic devices for the generation of single-photons, entangled photon pairs and ultra-low threshold lasing. Based on fundamental excitonic emission and on biexciton-exciton recombination cascade, a single QD embedded in a PCM become efficient emitters of single photons or entangled photon pairs provided that both spectral and spatial matching of the optical cavity mode and the optical emission of the single nanostructure occur. Within this approach, we have explored several systems and growth methods with the aim of fabricating QD which fulfil the requirements for an efficient coupling between a single QD and a PCM. We have fabricated QD by molecular beam epitaxy (MBE) using a) droplet epitaxy and b) selective nucleation at nano-holes fabricated by atomic force microscopy local oxidation (AFMLO) lithography. Results will be presented of QD in GaAs/AlGaAs(111)A, InAs/GaAs(001) and InAs/InP (001). With the aim of obtaining coupled QD-PCM, we have followed two procedures: one is based on the fabrication of a PCM around a buried QD whose position and wavelength emission are previously determined; the other approach consists of locating a single QD by using AFMLO, at the maximum of the electric field of a prefabricated PCM. A MBE re-growth procedure has been developed for completing the PCM membrane thickness.Peer Reviewe

Emission polarization control in semiconductor quantum dots coupled to a photonic crystal microcavity

8 páginas, 5 figuras.-- OCIS codes: (160.4760) Optical properties; (230.5298) Photonic crystals; (230.5590) Quantumwell, -wire and –dot devices.We study the optical emission of single semiconductor quantum dots weakly coupled to a photonic-crystal micro-cavity. The linearly polarized emission of a selected quantum dot changes continuously its polarization angle, from nearly perpendicular to the cavity mode polarization at large detuning, to parallel at zero detuning, and reversing sign for negative detuning. The linear polarization rotation is qualitatively interpreted in terms of the detuning dependent mixing of the quantum dot and cavity states. The present result is relevant to achieve continuous control of the linear polarization in single photon emitters.This work has been supported by research contracts of the Spanish Ministry of Education Grants MAT2008-01555/NAN, Consolider CSD 2006-19 and Naninpho-QD TEC2008-06756-C03- 01, and the Community of Madrid Grant Grant CAM (S2009/ESP-1503).Peer reviewe