We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of
∼14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a
standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of
0.375(λ/n)^3, is a promising and efficient light source for silicon photonics
