Mechanical mode engineering with orthotropic metamaterial membranes

Metamaterials are structures engineered at a small scale with respect to the wavelength of the excitations they interact with. These structures behave as artificial materials whose properties can be chosen by design, mocking and even outperforming natural materials and making them the quintessential tool for manipulation of wave systems. In this Letter we show how the acoustic properties of a silicon nitride membrane can be affected by nanopatterning. The degree of asymmetry in the pattern geometry induces an artificial anisotropic elasticity, resulting in the splitting of otherwise degenerate mechanical modes. The artificial material we introduce has a maximum Ledbetter-Migliori anisotropy of 1.568, favorably comparing to most bulk natural crystals. With an additional freedom in defining arbitrary asymmetry axes by pattern rotation, our approach can be useful for fundamental investigation of material properties as well as for devising improved sensors of light, mass or acceleration based on micromechanical resonators

Metamaterial-enabled asymmetric negative refraction of GHz mechanical waves

Known examples of negative refraction in metamaterials do not distinguish between positive and negative angles of incidence. Here, the authors show that it is possible to break this symmetry using an asymmetric unit cell, and demonstrate it using a mechanical metamaterial working at GHz frequencies. Wave refraction at an interface between different materials is a basic yet fundamental phenomenon, transversal to several scientific realms - electromagnetism, gas and fluid acoustics, solid mechanics, and possibly also matter waves. Under specific circumstances, mostly enabled by structuration below the wavelength scale, i.e., through the metamaterial approach, waves undergo negative refraction, eventually enabling superlensing and transformation optics. However, presently known negative refraction systems are symmetric, in that they cannot distinguish between positive and negative angles of incidence. Exploiting a metamaterial with an asymmetric unit cell, we demonstrate that the aforementioned symmetry can be broken, ultimately relying on the specific shape of the Bloch mode isofrequency curves. Our study specialized upon a mechanical metamaterial operating at GHz frequency, which is by itself a building block for advanced technologies such as chip-scale hybrid optomechanical and electromechanical devices. However, the phenomenon is based on general wave theory concepts, and it applies to any frequency and time scale for any kind of linear waves, provided that a suitable shaping of the isofrequency contours is implemented

High frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers

A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, Surface Acoustic Waves are injected in the Si layer where the material has been localy patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we found an external excitation peak efficiency in excess of 500 pm/V at 1 GHz mechanical frequency. Exploiting the long term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a strong candidate for hybrid quantum systems

Efficient microwave frequency conversion mediated by a photonics compatible silicon nitride nanobeam oscillator

Microelectromechanical systems and integrated photonics provide the basis for many reliable and compact circuit elements in modern communication systems. Electro-opto-mechanical devices are currently one of the leading approaches to realize ultra-sensitive, low-loss transducers for an emerging quantum information technology. Here we present an on-chip microwave frequency converter based on a planar aluminum on silicon nitride platform that is compatible with slot-mode coupled photonic crystal cavities. We show efficient frequency conversion between two propagating microwave modes mediated by the radiation pressure interaction with a metalized dielectric nanobeam oscillator. We achieve bidirectional coherent conversion with a total device efficiency of up to ~60%, a dynamic range of 2 × 10⁹ photons/s and an instantaneous bandwidth of up to 1.7 kHz. A high fidelity quantum state transfer would be possible if the drive dependent output noise of currently ~14 photons s⁻¹ Hz⁻¹ is further reduced. Such a silicon nitride based transducer is in situ reconfigurable and could be used for on-chip classical and quantum signal routing and filtering, both for microwave and hybrid microwave-optical applications

Electron beam induced current in InSb-InAs nanowire type-III heterostructures

InSb-InAs nanowire heterostructure diodes investigated by electron beam induced current (EBIC) demonstrate an unusual spatial profile where the sign of the EBIC signal changes in the vicinity of the heterointerface. A qualitative explanation confirmed by theoretical calculations is based on the specific band diagram of the structure representing a type-III heterojunction with an accumulation layer in InAs. The sign of the EBIC signal depends on the specific parameters of this layer. In the course of measurements, the diffusion length of holes in InAs and its temperature dependence are also determined

Stress-strain in electron-beam activated polymeric micro-actuators

Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two-dimensional materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article, we report a detailed investigation on electron-induced stress on a poly-methyl-methacrylate (PMMA) thin film material. After an assessment of stress values using a method based on dielectric cantilevers, we directly investigate the lateral shrinkage of PMMA patterns on epitaxial graphene, which reveals a universal behavior, independent of the electron acceleration energy. By knowing the stress-strain curve, we finally estimate an effective Young's modulus of PMMA on top of graphene, which is a relevant parameter for PMMA-based electron-beam lithography and strain engineering applications

Far-field characterization of the thermal dynamics in lasing microspheres

This work reports the dynamical thermal behavior of lasing microspheres placed on a dielectric substrate while they are homogeneously heated-up by the top-pump laser used to excite the active medium. The lasing modes are collected in the far-field and their temporal spectral traces show characteristic lifetimes of about 2 ms. The latter values scale with the microsphere radius and are independent of the pump power in the studied range. Finite-Element Method simulations reproduce the experimental results, revealing that the thermal dynamics is dominated by the heat dissipated towards the substrate through the medium surrounding the contact point. The characteristic system scale regarding thermal transport is of few hundreds of nanometers, thus enabling an effective toy model for investigating heat conduction in non-continuum gaseous media and near-field radiative energy transfer.Comment: 13 pages, 5 figure

Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions were investigated theoretically and experimentally. Analysis of the current-voltage characteristics showed that the current through the heterojunction is caused mostly by generation-recombination processes in the InSb and at the heterointerface. Due to the partially overlapping valence band of InSb and the conduction band of InAs, the second process is fast and activationless. Theoretical analysis showed that, depending on the heterojunction parameters, the flux of non-equilibrium minority carriers may have a different direction, explaining the experimentally observed non-monotonic coordinate dependence of the electron beam induced current